A 0.5erms Temporal Noise CMOS Image Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain

Ge, X. (Speaker), Theuwissen, A. (Speaker)

Activity: Talk or presentationTalk or presentation at a workshop, seminar, course or other meeting

Description

This paper introduces a proof-of-concept low-noise CMOS image sensor (CIS) intended for photon-starved imaging applications. The proposed architecture is based on a charge-sampling pixel featuring in-pixel amplification to reduce its inputreferred noise. With the proposed technique, the structure realizes a period-controlled variable conversion factor at pixel-level. This enables the conversion factor and the noise-equivalent number of electrons to be tunable according to the application without any change in hardware. The obtained noise
performance is comparable to the state-of-the-art lownoise CIS, while this work employs a simpler circuit, without suffering from dynamic range limitations. The
device is fabricated in a low-cost, standard CIS process.
Period30 May 20172 Jun 2017
Event titleInternational Image Sensor Workshop 2017
Event typeConference
LocationHiroshima, Japan