Data and analysis files accompanying the paper: 'Engineered Ge profiles in Si/SiGe heterostructures for increased valley splitting'

The data sets are provided for the analysis of the raw data and subsequent creation of the figures presented in the manuscript 'Engineering' Ge profiles in Si/SiGe heterostructures for increased valley splitting. The data supports the characterisation of 2D transport measurements in Heterostructure field effect transistors. We probe valley splitting energy from quantum hall experiments and find a correlation between increased valley splitting and increased disorder.