Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

Data used in the figures of paper: "A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature". Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.