Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

M Saadaoui; H van Zeijl; WHA Wien; HTM Pham; C Kwakernaak; HCM Knoops; WMM Kessels; RMCM van de Sanden; FC Voogt; F Roozeboom; PM Sarro

doi:10.1109/TCPMT.2011.2167969

Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

M Saadaoui, H van Zeijl, WHA Wien, HTM Pham, C Kwakernaak, HCM Knoops, WMM Kessels, RMCM van de Sanden, FC Voogt, F Roozeboom, PM Sarro

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	1728-1738
Number of pages	11
Journal	IEEE Transactions on Components and Packaging Technology
Volume	1
Issue number	11
DOIs	https://doi.org/10.1109/TCPMT.2011.2167969
Publication status	Published - 2011

Keywords

CWTS JFIS < 0.75

Access to Document

10.1109/TCPMT.2011.2167969

Cite this

Saadaoui, M., van Zeijl, H., Wien, WHA., Pham, HTM., Kwakernaak, C., Knoops, HCM., Kessels, WMM., van de Sanden, RMCM., Voogt, FC., Roozeboom, F., & Sarro, PM. (2011). Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating. IEEE Transactions on Components and Packaging Technology, 1(11), 1728-1738. https://doi.org/10.1109/TCPMT.2011.2167969

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author = "M Saadaoui and {van Zeijl}, H and WHA Wien and HTM Pham and C Kwakernaak and HCM Knoops and WMM Kessels and {van de Sanden}, RMCM and FC Voogt and F Roozeboom and PM Sarro",

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doi = "10.1109/TCPMT.2011.2167969",

language = "Undefined/Unknown",

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Saadaoui, M, van Zeijl, H, Wien, WHA, Pham, HTM, Kwakernaak, C, Knoops, HCM, Kessels, WMM, van de Sanden, RMCM, Voogt, FC, Roozeboom, F & Sarro, PM 2011, 'Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating', IEEE Transactions on Components and Packaging Technology, vol. 1, no. 11, pp. 1728-1738. https://doi.org/10.1109/TCPMT.2011.2167969

Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating. / Saadaoui, M; van Zeijl, H; Wien, WHA et al.
In: IEEE Transactions on Components and Packaging Technology, Vol. 1, No. 11, 2011, p. 1728-1738.

Research output: Contribution to journal › Article › Scientific › peer-review

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T1 - Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

AU - Saadaoui, M

AU - van Zeijl, H

AU - Wien, WHA

AU - Pham, HTM

AU - Kwakernaak, C

AU - Knoops, HCM

AU - Kessels, WMM

AU - van de Sanden, RMCM

AU - Voogt, FC

AU - Roozeboom, F

AU - Sarro, PM

PY - 2011

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DO - 10.1109/TCPMT.2011.2167969

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VL - 1

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EP - 1738

JO - IEEE Transactions on Components and Packaging Technology

JF - IEEE Transactions on Components and Packaging Technology

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