Improved PECVD processed hydrogenated germanium films through temperature induced densification

Thierry de Vrijer; Julian E.C. van Dingen; Paul J.  Roelandschap; Koos Roodenburg; Arno H.M. Smets

doi:10.1016/j.mssp.2021.106285

Improved PECVD processed hydrogenated germanium films through temperature induced densification

Thierry de Vrijer, Julian E.C. van Dingen, Paul J. Roelandschap, Koos Roodenburg, Arno H.M. Smets

Photovoltaic Materials and Devices

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Amorphous and nano-crystalline germanium is of potential interest for a wide range of electronic, optical, opto-electronic and photovoltaic applications. In this work the influence of deposition temperature on hydrogenated germanium (Ge:H) films was characterized, using over 200 Ge:H and over 70 SiGe:H films. The demonstrated temperature-induced densification of Ge:H films resulted in more stable films with a lower bandgap energy and dark conductivity and higher activation energy.

Original language	English
Article number	106285
Pages (from-to)	1-7
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	138
DOIs	https://doi.org/10.1016/j.mssp.2021.106285
Publication status	Published - 2022

Keywords

Amorphous germanium
Chemical stability
Hydrogenated germanium
PECVD
Temperature densification
Thin film

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.mssp.2021.106285

1-s2.0-S1369800121006193-mainFinal published version, 1.71 MBLicence: CC BY

Cite this

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title = "Improved PECVD processed hydrogenated germanium films through temperature induced densification",

abstract = "Amorphous and nano-crystalline germanium is of potential interest for a wide range of electronic, optical, opto-electronic and photovoltaic applications. In this work the influence of deposition temperature on hydrogenated germanium (Ge:H) films was characterized, using over 200 Ge:H and over 70 SiGe:H films. The demonstrated temperature-induced densification of Ge:H films resulted in more stable films with a lower bandgap energy and dark conductivity and higher activation energy.",

keywords = "Amorphous germanium, Chemical stability, Hydrogenated germanium, PECVD, Temperature densification, Thin film",

author = "{de Vrijer}, Thierry and {van Dingen}, {Julian E.C.} and Roelandschap, {Paul J.} and Koos Roodenburg and Smets, {Arno H.M.}",

year = "2022",

doi = "10.1016/j.mssp.2021.106285",

language = "English",

volume = "138",

pages = "1--7",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

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T1 - Improved PECVD processed hydrogenated germanium films through temperature induced densification

AU - de Vrijer, Thierry

AU - van Dingen, Julian E.C.

AU - Roelandschap, Paul J.

AU - Roodenburg, Koos

AU - Smets, Arno H.M.

PY - 2022

Y1 - 2022

N2 - Amorphous and nano-crystalline germanium is of potential interest for a wide range of electronic, optical, opto-electronic and photovoltaic applications. In this work the influence of deposition temperature on hydrogenated germanium (Ge:H) films was characterized, using over 200 Ge:H and over 70 SiGe:H films. The demonstrated temperature-induced densification of Ge:H films resulted in more stable films with a lower bandgap energy and dark conductivity and higher activation energy.

AB - Amorphous and nano-crystalline germanium is of potential interest for a wide range of electronic, optical, opto-electronic and photovoltaic applications. In this work the influence of deposition temperature on hydrogenated germanium (Ge:H) films was characterized, using over 200 Ge:H and over 70 SiGe:H films. The demonstrated temperature-induced densification of Ge:H films resulted in more stable films with a lower bandgap energy and dark conductivity and higher activation energy.

KW - Amorphous germanium

KW - Chemical stability

KW - Hydrogenated germanium

KW - PECVD

KW - Temperature densification

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=85118182772&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2021.106285

DO - 10.1016/j.mssp.2021.106285

M3 - Article

AN - SCOPUS:85118182772

SN - 1369-8001

VL - 138

SP - 1

EP - 7

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 106285

ER -

Improved PECVD processed hydrogenated germanium films through temperature induced densification

Abstract

Keywords

UN SDGs

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