1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS

U. Sonmez; F. Sebastiano; K.A.A. Makinwa

doi:10.1109/ISSCC.2016.7417979

1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS

U. Sonmez, F. Sebastiano, K.A.A. Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

33 Citations (Scopus)

Abstract

This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves ±1.4°C (3σ) inaccuracy from -40 to 125°C, which is a 5× improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to ±0.75°C (3σ) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 μm2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ΔΣ ADC.

Original language	English
Title of host publication	2016 IEEE International Solid-State Circuits Conference, ISSCC 2016
Subtitle of host publication	Digest of Technical Papers
Editors	Laura C. Fujino
Place of Publication	Danvers, MA
Publisher	IEEE
Pages	206-207
Number of pages	2
ISBN (Electronic)	978-1-4673-9467-3
ISBN (Print)	978-1-4673-9466-6
DOIs	https://doi.org/10.1109/ISSCC.2016.7417979
Publication status	Published - 25 Feb 2016
Event	2016 IEEE International Solid-State Circuits Conference, ISSCC 2016 - San Francisco, CA, United States Duration: 31 Jan 2016 → 4 Feb 2016 http://isscc.org/index.html

Conference

Conference	2016 IEEE International Solid-State Circuits Conference, ISSCC 2016
Abbreviated title	ISSCC 2016
Country/Territory	United States
City	San Francisco, CA
Period	31/01/16 → 4/02/16
Internet address	http://isscc.org/index.html

Keywords

Temperature sensors
Radiation detectors
Temperature measurement
CMOS integrated circuits
Monitoring

Access to Document

10.1109/ISSCC.2016.7417979

Cite this

@inproceedings{52f470b262924027ad1c3f7f89cabacf,

title = "1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS",

abstract = "This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves ±1.4°C (3σ) inaccuracy from -40 to 125°C, which is a 5× improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to ±0.75°C (3σ) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 μm2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ΔΣ ADC.",

keywords = "Temperature sensors, Radiation detectors, Temperature measurement, CMOS integrated circuits, Monitoring",

author = "U. Sonmez and F. Sebastiano and K.A.A. Makinwa",

year = "2016",

month = feb,

day = "25",

doi = "10.1109/ISSCC.2016.7417979",

language = "English",

isbn = "978-1-4673-9466-6",

pages = "206--207",

editor = "Fujino, {Laura C.}",

booktitle = "2016 IEEE International Solid-State Circuits Conference, ISSCC 2016",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, ISSCC 2016 ; Conference date: 31-01-2016 Through 04-02-2016",

url = "http://isscc.org/index.html",

}

Sonmez, U, Sebastiano, F & Makinwa, KAA 2016, 1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS. in LC Fujino (ed.), 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016: Digest of Technical Papers. IEEE, Danvers, MA, pp. 206-207, 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, United States, 31/01/16. https://doi.org/10.1109/ISSCC.2016.7417979

1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS. / Sonmez, U.; Sebastiano, F.; Makinwa, K.A.A.
2016 IEEE International Solid-State Circuits Conference, ISSCC 2016: Digest of Technical Papers. ed. / Laura C. Fujino. Danvers, MA: IEEE, 2016. p. 206-207.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - 1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS

AU - Sonmez, U.

AU - Sebastiano, F.

AU - Makinwa, K.A.A.

PY - 2016/2/25

Y1 - 2016/2/25

N2 - This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves ±1.4°C (3σ) inaccuracy from -40 to 125°C, which is a 5× improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to ±0.75°C (3σ) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 μm2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ΔΣ ADC.

AB - This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves ±1.4°C (3σ) inaccuracy from -40 to 125°C, which is a 5× improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to ±0.75°C (3σ) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 μm2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ΔΣ ADC.

KW - Temperature sensors

KW - Radiation detectors

KW - Temperature measurement

KW - CMOS integrated circuits

KW - Monitoring

U2 - 10.1109/ISSCC.2016.7417979

DO - 10.1109/ISSCC.2016.7417979

M3 - Conference contribution

SN - 978-1-4673-9466-6

SP - 206

EP - 207

BT - 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016

A2 - Fujino, Laura C.

PB - IEEE

CY - Danvers, MA

T2 - 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016

Y2 - 31 January 2016 through 4 February 2016

ER -

1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS

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Conference

Keywords

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