1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

30 Citations (Scopus)

Abstract

This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves ±1.4°C (3σ) inaccuracy from -40 to 125°C, which is a 5× improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to ±0.75°C (3σ) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 μm2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ΔΣ ADC.
Original languageEnglish
Title of host publication2016 IEEE International Solid-State Circuits Conference, ISSCC 2016
Subtitle of host publicationDigest of Technical Papers
EditorsLaura C. Fujino
Place of PublicationDanvers, MA
PublisherIEEE
Pages206-207
Number of pages2
ISBN (Electronic)978-1-4673-9467-3
ISBN (Print)978-1-4673-9466-6
DOIs
Publication statusPublished - 25 Feb 2016
Event2016 IEEE International Solid-State Circuits Conference, ISSCC 2016 - San Francisco, CA, United States
Duration: 31 Jan 20164 Feb 2016
http://isscc.org/index.html

Conference

Conference2016 IEEE International Solid-State Circuits Conference, ISSCC 2016
Abbreviated titleISSCC 2016
Country/TerritoryUnited States
CitySan Francisco, CA
Period31/01/164/02/16
Internet address

Keywords

  • Temperature sensors
  • Radiation detectors
  • Temperature measurement
  • CMOS integrated circuits
  • Monitoring

Fingerprint

Dive into the research topics of '1650μm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS'. Together they form a unique fingerprint.

Cite this