TY - GEN
T1 - 23.2 A 40 A Shunt-Based Current Sensor with ±0.2% Gain Error from -40°C to 125°C and Self-Calibration
AU - Tang, Zhong
AU - Toth, Nandor G.
AU - Zamparette, Roger
AU - Nezuka, Tomohiro
AU - Furuta, Yoshikazu
AU - Makinwa, Kofi A.A.
N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
PY - 2023
Y1 - 2023
N2 - Low-cost metal (e.g., PCB trace) shunts can be used to make accurate current sensors (< 1 % gain error) [1-3]. However, their reported maximum operating temperature (85 circC) is not high enough for automotive applications, and at higher temperatures, shunt resistance may exhibit increased drift, especially at high current levels. This paper presents a metal-shunt-based current sensor with a wide temperature range and a stable on-chip reference current (I textREF) source for shunt self-calibration. By employing a continuous-time (CT) front-end, it achieves an input noise density of 14textnV/sqrttextHz while consuming only 280mu A, making it > 10times more energy efficient than prior art [1], [2], with comparable gain error (pm0.2%) over a wider current (pm 40A) and temperature (-40 circC to 125 circC) range.
AB - Low-cost metal (e.g., PCB trace) shunts can be used to make accurate current sensors (< 1 % gain error) [1-3]. However, their reported maximum operating temperature (85 circC) is not high enough for automotive applications, and at higher temperatures, shunt resistance may exhibit increased drift, especially at high current levels. This paper presents a metal-shunt-based current sensor with a wide temperature range and a stable on-chip reference current (I textREF) source for shunt self-calibration. By employing a continuous-time (CT) front-end, it achieves an input noise density of 14textnV/sqrttextHz while consuming only 280mu A, making it > 10times more energy efficient than prior art [1], [2], with comparable gain error (pm0.2%) over a wider current (pm 40A) and temperature (-40 circC to 125 circC) range.
UR - http://www.scopus.com/inward/record.url?scp=85151688284&partnerID=8YFLogxK
U2 - 10.1109/ISSCC42615.2023.10067304
DO - 10.1109/ISSCC42615.2023.10067304
M3 - Conference contribution
AN - SCOPUS:85151688284
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 348
EP - 350
BT - 2023 IEEE International Solid-State Circuits Conference, ISSCC 2023
PB - Institute of Electrical and Electronics Engineers (IEEE)
T2 - 2023 IEEE International Solid-State Circuits Conference, ISSCC 2023
Y2 - 19 February 2023 through 23 February 2023
ER -