TY - GEN
T1 - 23.5 A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from -55°C to 125°C
AU - Tang, Zhong
AU - Pan, Sining
AU - Makinwa, Kofi A.A.
N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
PY - 2023
Y1 - 2023
N2 - BJT-based temperature sensors are widely used because they can achieve excellent accuracy after 1-point calibration. However, they typically dissipate mu textWs of power and require supply voltages above 1V [1]. Although sensors based on DTMOSTs [2], [3], capacitively biased (CB) diodes and BJTs [4,5] have demonstrated sub-1V operation, this comes at the expense of accuracy. This paper presents a sub-1V CB BJT-based temperature sensor that achieves a 1-point-trimmed inaccuracy of 0.15°C (3σ) from -55 circC to 125 circC, which is 4times better than the CB BJT state-of-the-art [4]. It also achieves a resolution FoM of 0.34pJ.K2, which is 6.8 times better than that of state-of-the-art BJT-based sensors with a similar accuracy [1], [6], (Fig. 23.5.6).
AB - BJT-based temperature sensors are widely used because they can achieve excellent accuracy after 1-point calibration. However, they typically dissipate mu textWs of power and require supply voltages above 1V [1]. Although sensors based on DTMOSTs [2], [3], capacitively biased (CB) diodes and BJTs [4,5] have demonstrated sub-1V operation, this comes at the expense of accuracy. This paper presents a sub-1V CB BJT-based temperature sensor that achieves a 1-point-trimmed inaccuracy of 0.15°C (3σ) from -55 circC to 125 circC, which is 4times better than the CB BJT state-of-the-art [4]. It also achieves a resolution FoM of 0.34pJ.K2, which is 6.8 times better than that of state-of-the-art BJT-based sensors with a similar accuracy [1], [6], (Fig. 23.5.6).
UR - http://www.scopus.com/inward/record.url?scp=85151650022&partnerID=8YFLogxK
U2 - 10.1109/ISSCC42615.2023.10067695
DO - 10.1109/ISSCC42615.2023.10067695
M3 - Conference contribution
AN - SCOPUS:85151650022
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 354
EP - 356
BT - 2023 IEEE International Solid-State Circuits Conference, ISSCC 2023
PB - Institute of Electrical and Electronics Engineers (IEEE)
T2 - 2023 IEEE International Solid-State Circuits Conference, ISSCC 2023
Y2 - 19 February 2023 through 23 February 2023
ER -