Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

Guangyao Yu; Thiago Batista Soeiro; Jianning Dong; Pavol  Bauer

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

Guangyao Yu^*, Thiago Batista Soeiro, Jianning Dong, Pavol Bauer

^*Corresponding author for this work

DC systems, Energy conversion & Storage

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.

Original language	English
Title of host publication	Proceedings of the 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
Publisher	IEEE
Pages	1-9
Number of pages	9
ISBN (Electronic)	978-9-0758-1539-9
ISBN (Print)	978-1-6654-8700-9
Publication status	Published - 2022
Event	2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) - Hanover, Germany Duration: 5 Sept 2022 → 9 Sept 2022 Conference number: 24th

Conference

Conference	2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
Country/Territory	Germany
City	Hanover
Period	5/09/22 → 9/09/22

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care

Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

Silicon carbide
Computational modeling
«AC-DC converter»
«Analytical losses computation»
«Conduction losses»
«Silicon Carbide (SiC)>>
«Shunt current»

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Comparison_of_Two_and_Three-Level_AC-DC_Rectifier_Semiconductor_Losses_with_SiC_MOSFETs_Considering_Reverse_ConductionFinal published version, 1.54 MB

https://ieeexplore.ieee.org/document/9907461

Cite this

@inproceedings{2bd555232133475c930456ccabcace4d,

title = "Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction",

abstract = "This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.",

keywords = "Silicon carbide, Computational modeling, «AC-DC converter», «Analytical losses computation», «Conduction losses», «Silicon Carbide (SiC)>>, «Shunt current»",

author = "Guangyao Yu and Soeiro, {Thiago Batista} and Jianning Dong and Pavol Bauer",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) ; Conference date: 05-09-2022 Through 09-09-2022",

year = "2022",

language = "English",

isbn = "978-1-6654-8700-9",

pages = "1--9",

booktitle = "Proceedings of the 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)",

publisher = "IEEE",

address = "United States",

}

Yu, G, Soeiro, TB, Dong, J & Bauer, P 2022, Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction. in Proceedings of the 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). IEEE, pp. 1-9, 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 5/09/22. <https://ieeexplore.ieee.org/document/9907461>

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction. / Yu, Guangyao; Soeiro, Thiago Batista; Dong, Jianning et al.
Proceedings of the 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). IEEE, 2022. p. 1-9.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

AU - Yu, Guangyao

AU - Soeiro, Thiago Batista

AU - Dong, Jianning

AU - Bauer, Pavol

N1 - Conference code: 24th

PY - 2022

Y1 - 2022

N2 - This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.

AB - This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.

KW - Silicon carbide

KW - Computational modeling

KW - «AC-DC converter»

KW - «Analytical losses computation»

KW - «Conduction losses»

KW - «Silicon Carbide (SiC)>>

KW - «Shunt current»

M3 - Conference contribution

SN - 978-1-6654-8700-9

SP - 1

EP - 9

BT - Proceedings of the 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

PB - IEEE

T2 - 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Y2 - 5 September 2022 through 9 September 2022

ER -

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

Abstract

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Bibliographical note

Keywords

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