2D simulation of hot-carrier-induced degradation and reliability analysis for single grain Si TFTs

J Tan, A Baiano, R Ishihara, CIM Beenakker

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Original languageUndefined/Unknown
Title of host publicationThe annual workshop on semiconductor advances for future electronics and sensors
Editors s.n.
Place of PublicationVeldhoven, The Netherlands
PublisherSTW
Pages600-603
Number of pages4
ISBN (Print)978-90-73461-56-7
Publication statusPublished - 2008
EventSAFE 2008, Veldhoven, the Netherlands - Veldhoven, the Nederlands
Duration: 27 Nov 200828 Nov 2008

Publication series

Name
PublisherSTW

Conference

ConferenceSAFE 2008, Veldhoven, the Netherlands
Period27/11/0828/11/08

Keywords

  • conference contrib. refereed
  • Vakpubl., Overig wet. > 3 pag

Cite this

Tan, J., Baiano, A., Ishihara, R., & Beenakker, CIM. (2008). 2D simulation of hot-carrier-induced degradation and reliability analysis for single grain Si TFTs. In s.n. (Ed.), The annual workshop on semiconductor advances for future electronics and sensors (pp. 600-603). STW.