VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

V Mohammadi; L Qi; N Golshani; C Mok Kai Rine; WB De Boer; A Sammak; J Derakhshandeh Kheljani; J van der Cingel; LK Nanver

doi:10.1109/LED.2013.2287221

VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

V Mohammadi, L Qi, N Golshani, C Mok Kai Rine, WB De Boer, A Sammak, J Derakhshandeh Kheljani, J van der Cingel, LK Nanver

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

25 Citations (Scopus)

Original language	English
Pages (from-to)	1545-1547
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	12
DOIs	https://doi.org/10.1109/LED.2013.2287221
Publication status	Published - 2013

Bibliographical note

Harvest

Access to Document

10.1109/LED.2013.2287221

Cite this

@article{3409b021b06d448e97cf9e5c9c235cd1,

title = "VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition",

author = "V Mohammadi and L Qi and N Golshani and {Mok Kai Rine}, C and {De Boer}, WB and A Sammak and {Derakhshandeh Kheljani}, J and {van der Cingel}, J and LK Nanver",

note = "Harvest",

year = "2013",

doi = "10.1109/LED.2013.2287221",

language = "English",

volume = "34",

pages = "1545--1547",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "12",

}

TY - JOUR

T1 - VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

AU - Mohammadi, V

AU - Qi, L

AU - Golshani, N

AU - Mok Kai Rine, C

AU - De Boer, WB

AU - Sammak, A

AU - Derakhshandeh Kheljani, J

AU - van der Cingel, J

AU - Nanver, LK

N1 - Harvest

PY - 2013

Y1 - 2013

U2 - 10.1109/LED.2013.2287221

DO - 10.1109/LED.2013.2287221

M3 - Article

SN - 0741-3106

VL - 34

SP - 1545

EP - 1547

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -