3D Simulation Study of Strained CMOS based on a disposable SiGe Dot Technology

S Fregonese, Y Zhuang, J Burghartz

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Name
Publisher	s.n.

Keywords

@inproceedings{eb60f8d57475413c8fd0a2d06fc4b746,

title = "3D Simulation Study of Strained CMOS based on a disposable SiGe Dot Technology",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "S Fregonese and Y Zhuang and J Burghartz",

year = "2007",

language = "Undefined/Unknown",

publisher = "s.n.",

pages = "1--4",

editor = "s.n.",

booktitle = "GDR Nanoelectronics",

}