TY - JOUR
T1 - Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators
AU - Buijtendorp, Bruno T.
AU - Bueno, Juan
AU - Thoen, David J.
AU - Murugesan, Vignesh
AU - Sberna, Paolo M.
AU - Baselmans, Jochem J.A.
AU - Vollebregt, Sten
AU - Endo, Akira
PY - 2022
Y1 - 2022
N2 - Superconducting circuit elements used in millimeter-submillimeter (mm-submm) astronomy would greatly benefit from deposited dielectrics with small dielectric loss and noise. This will enable the use of multilayer circuit elements and thereby increase the efficiency of mm-submm filters and allow for a miniaturization of microwave kinetic inductance detectors (MKIDs). Amorphous dielectrics introduce excess loss and noise compared with their crystalline counterparts, due to two-level system defects of unknown microscopic origin. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C, and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-Angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10-5 for a resonator energy of 105 photons, at 120 mK and 4 to 7 GHz. This makes these films promising for MKIDs and on-chip mm-submm filters.
AB - Superconducting circuit elements used in millimeter-submillimeter (mm-submm) astronomy would greatly benefit from deposited dielectrics with small dielectric loss and noise. This will enable the use of multilayer circuit elements and thereby increase the efficiency of mm-submm filters and allow for a miniaturization of microwave kinetic inductance detectors (MKIDs). Amorphous dielectrics introduce excess loss and noise compared with their crystalline counterparts, due to two-level system defects of unknown microscopic origin. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C, and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-Angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10-5 for a resonator energy of 105 photons, at 120 mK and 4 to 7 GHz. This makes these films promising for MKIDs and on-chip mm-submm filters.
KW - amorphous silicon
KW - dielectric loss
KW - filter bank
KW - kinetic inductance detectors
KW - millimeter-submillimeter
KW - spectrometer
UR - http://www.scopus.com/inward/record.url?scp=85133696660&partnerID=8YFLogxK
U2 - 10.1117/1.JATIS.8.2.028006
DO - 10.1117/1.JATIS.8.2.028006
M3 - Article
AN - SCOPUS:85133696660
SN - 2329-4124
VL - 8
JO - Journal of Astronomical Telescopes, Instruments, and Systems
JF - Journal of Astronomical Telescopes, Instruments, and Systems
IS - 2
M1 - 028006
ER -