Abstract
We formed phosphorous(P)-ion-implanted n-BaSi2 films on p-Si(111) substrates and demonstrated solar-cell functionality of the n-BaSi2/p-Si heterojunction under AM1.5 illumination. The BaSi2 films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi2 films using PF3 gas at an energy of 10 keV and a dose of 1 × 1014 cm−2. Subsequent postannealing was conducted at 500°C in Ar for different durations (t = 30–480 s) to activate the P atoms. The diffusion coefficient for P atoms in BaSi2 was evaluated from the depth profiles of P atoms by secondary-ion mass spectrometry. The activation energies of lattice and grain boundary diffusion were found to be 1.1 ± 0.6 and 2.5 ± 0.6 eV, respectively. From the analysis of Raman and photoluminescence spectra, the ion implantation damage was recovered by the postannealing. For one treated sample with t = 120 s, the internal quantum efficiency reached 67% at a wavelength of 870 nm. This is the highest ever achieved for n-BaSi2/p-Si heterojunction solar cells. Ion implantation is thus applicable to BaSi2 films grown by any other method. This achievement thereby opens a new route for the formation of BaSi2 solar cells.
Original language | English |
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Pages (from-to) | 1360-1368 |
Number of pages | 9 |
Journal | Progress in Photovoltaics: research and applications |
Volume | 31 (2023) |
Issue number | 12 |
DOIs | |
Publication status | Published - 2022 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Keywords
- BaSi
- ion implantation
- solar cell