A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM

YY Kim; W Choi; J Kim; S Lee; S Lee; H Kim; KAA Makinwa; Y Chae; TW Kim

doi:10.1109/ESSCIRC.2015.7313878

A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM

YY Kim, W Choi, J Kim, S Lee, S Lee, H Kim, KAA Makinwa, Y Chae, TW Kim

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

12 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 41st European Solid-State Circuits Conference
Editors	W Pribyl, F Dielacher, G Hueber
Place of Publication	Piscataway
Publisher	IEEE
Pages	267-270
Number of pages	4
ISBN (Print)	978-1-4673-7470-5
DOIs	https://doi.org/10.1109/ESSCIRC.2015.7313878
Publication status	Published - 2015
Event	ESSCIRC 2015: 41th European Solid-State Circuits Conference - Messe Congress, Graz, Austria Duration: 14 Sept 2015 → 18 Sept 2015 Conference number: 41

Publication series

Name
Publisher	IEEE

Conference

Conference	ESSCIRC 2015
Abbreviated title	ESSCIRC
Country/Territory	Austria
City	Graz
Period	14/09/15 → 18/09/15

Access to Document

10.1109/ESSCIRC.2015.7313878

Cite this

Kim, YY., Choi, W., Kim, J., Lee, S., Lee, S., Kim, H., Makinwa, KAA., Chae, Y., & Kim, TW. (2015). A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM. In W. Pribyl, F. Dielacher, & G. Hueber (Eds.), Proceedings of the 41st European Solid-State Circuits Conference (pp. 267-270). IEEE. https://doi.org/10.1109/ESSCIRC.2015.7313878

@inproceedings{5f1bbc6bae2e49a99a9f0d9a21d07ba0,

title = "A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM",

author = "YY Kim and W Choi and J Kim and S Lee and S Lee and H Kim and KAA Makinwa and Y Chae and TW Kim",

year = "2015",

doi = "10.1109/ESSCIRC.2015.7313878",

language = "Undefined/Unknown",

isbn = "978-1-4673-7470-5",

publisher = "IEEE",

pages = "267--270",

editor = "W Pribyl and F Dielacher and G Hueber",

booktitle = "Proceedings of the 41st European Solid-State Circuits Conference",

address = "United States",

note = "ESSCIRC 2015 ; Conference date: 14-09-2015 Through 18-09-2015",

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Kim, YY, Choi, W, Kim, J, Lee, S, Lee, S, Kim, H, Makinwa, KAA, Chae, Y & Kim, TW 2015, A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM. in W Pribyl, F Dielacher & G Hueber (eds), Proceedings of the 41st European Solid-State Circuits Conference. IEEE, Piscataway, pp. 267-270, ESSCIRC 2015, Graz, Austria, 14/09/15. https://doi.org/10.1109/ESSCIRC.2015.7313878

A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM. / Kim, YY; Choi, W; Kim, J et al.
Proceedings of the 41st European Solid-State Circuits Conference. ed. / W Pribyl; F Dielacher; G Hueber. Piscataway: IEEE, 2015. p. 267-270.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM

AU - Kim, YY

AU - Choi, W

AU - Kim, J

AU - Lee, S

AU - Kim, H

AU - Makinwa, KAA

AU - Chae, Y

AU - Kim, TW

N1 - Conference code: 41

PY - 2015

Y1 - 2015

U2 - 10.1109/ESSCIRC.2015.7313878

DO - 10.1109/ESSCIRC.2015.7313878

M3 - Conference contribution

SN - 978-1-4673-7470-5

SP - 267

EP - 270

BT - Proceedings of the 41st European Solid-State Circuits Conference

A2 - Pribyl, W

A2 - Dielacher, F

A2 - Hueber, G

PB - IEEE

CY - Piscataway

T2 - ESSCIRC 2015

Y2 - 14 September 2015 through 18 September 2015

ER -