A ±0.4°C (3¿) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2

CPL van Vroonhoven; D d'Aquino; KAA Makinwa

doi:10.1109/ISSCC.2012.6176976

A ±0.4°C (3¿) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2

CPL van Vroonhoven, D d'Aquino, KAA Makinwa

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

13 Citations (Scopus)

Original language	English
Title of host publication	Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference
Editors	L Fujino
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	204-206
Number of pages	3
ISBN (Print)	978-1-4673-0377-4
DOIs	https://doi.org/10.1109/ISSCC.2012.6176976
Publication status	Published - 2012
Event	ISSCC 2012, San Francisco, CA, USA - Piscataway, NJ, USA Duration: 19 Feb 2012 → 23 Feb 2012

Publication series

Name
Publisher	IEEE

Conference

Conference	ISSCC 2012, San Francisco, CA, USA
Period	19/02/12 → 23/02/12

Bibliographical note

Harvest
Article number: 6176976

Access to Document

10.1109/ISSCC.2012.6176976

Cite this

@inproceedings{6299c3df4e304c1aaff32b5e891a28d9,

title = "A ±0.4°C (3¿) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2",

author = "{van Vroonhoven}, CPL and D d'Aquino and KAA Makinwa",

note = "Harvest Article number: 6176976; ISSCC 2012, San Francisco, CA, USA ; Conference date: 19-02-2012 Through 23-02-2012",

year = "2012",

doi = "10.1109/ISSCC.2012.6176976",

language = "English",

isbn = "978-1-4673-0377-4",

publisher = "IEEE Society",

pages = "204--206",

editor = "L Fujino",

booktitle = "Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference",

}

van Vroonhoven, CPL, d'Aquino, D & Makinwa, KAA 2012, A ±0.4°C (3¿) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2. in L Fujino (ed.), Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference. IEEE Society, Piscataway, NJ, USA, pp. 204-206, ISSCC 2012, San Francisco, CA, USA, 19/02/12. https://doi.org/10.1109/ISSCC.2012.6176976

A ±0.4°C (3¿) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2. / van Vroonhoven, CPL; d'Aquino, D; Makinwa, KAA.

Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference. ed. / L Fujino. Piscataway, NJ, USA : IEEE Society, 2012. p. 204-206.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A ±0.4°C (3¿) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2

AU - van Vroonhoven, CPL

AU - d'Aquino, D

AU - Makinwa, KAA

N1 - Harvest Article number: 6176976

PY - 2012

Y1 - 2012

U2 - 10.1109/ISSCC.2012.6176976

DO - 10.1109/ISSCC.2012.6176976

M3 - Conference contribution

SN - 978-1-4673-0377-4

SP - 204

EP - 206

BT - Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference

A2 - Fujino, L

PB - IEEE Society

CY - Piscataway, NJ, USA

T2 - ISSCC 2012, San Francisco, CA, USA

Y2 - 19 February 2012 through 23 February 2012

ER -