A 0.5erms Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain

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Abstract

A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18-μm CIS process, features pixel-level amplification and achieves an input-referred noise of 0.5 e−rms with a correlated double sampling period of 5μs and a row read-out time of 10 μs. The proposed structurealso realizes a variable conversion gain (CG) with a period-controlled method. This enables the read-out path CG and the noise-equivalent number of electrons to be programmable according to the application without any change in hardware. The experiments show that the measured CG can be tuned from 50 μV/e- to 1.6 mV/e- with a charging period from 100 ns to 4μs. The measured characteristics of the prototype CIS are in a good agreement with expectations, demonstrating the effectiveness of the proposed techniques.
Original languageEnglish
Pages (from-to)5019-5026
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume64
Issue number12
DOIs
Publication statusPublished - 2017

Bibliographical note

Accepted Author Manuscript

Keywords

  • Charge-domain sampling
  • CMOS image sensor
  • conversion gain (CG)
  • low noise
  • low pass
  • period controlled
  • pixel-level amplification
  • sinc-type filter
  • subelectron

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