@article{04dcfdf749054877bbfd8fca919929b8,
title = "A 1 × 400 backside-illuminated SPAD sensor with 49.7 ps resolution, 30 pJ/sample TDCs fabricated in 3D CMOS technology for near-infrared optical tomography",
author = "JM Pavia and M Scandiuzzo and S Lindner and M Wolf and E Charbon",
note = "Harvest Date of publication 10-9-2015",
year = "2015",
doi = "10.1109/JSSC.2015.2467170",
language = "English",
volume = "50",
pages = "2406--2418",
journal = "IEEE Journal of Solid State Circuits",
issn = "0018-9200",
publisher = "IEEE ",
number = "10",
}