A 1 × 400 backside-illuminated SPAD sensor with 49.7 ps resolution, 30 pJ/sample TDCs fabricated in 3D CMOS technology for near-infrared optical tomography

JM Pavia, M Scandiuzzo, S Lindner, M Wolf, E Charbon

Research output: Contribution to journalArticleScientificpeer-review

68 Citations (Scopus)
Original languageEnglish
Pages (from-to)2406-2418
Number of pages13
JournalIEEE Journal of Solid State Circuits
Issue number10
Publication statusPublished - 2015

Bibliographical note

Date of publication 10-9-2015

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