A 112W GaN dual input Doherty-Outphasing Power Amplifier

A. R. Qureshi, M. Acar, J. Qureshi, R. Wesson, L. C. N. de Vreede

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

25 Citations (Scopus)


This paper presents a novel dual-input Doherty-Outphasing Power Amplifier (DOPA) architecture that combines the efficiency advantages of Doherty and Outphasing amplifiers in power back-off (PBO). The proposed architecture, utilizes Doherty operation from peak power to -6dB PBO and mixed-mode outphasing from -6 to -14 dB PBO. A 2.14 GHz 112W GaN DOPA has been designed to demonstrate the concept, it provides 66% peak efficiency and more than 50% efficiency over a 12 dB PBO range.
Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium (IMS)
Number of pages4
ISBN (Electronic)978-1-5090-0698-4
ISBN (Print)978-1-5090-0699-1
Publication statusPublished - May 2016
EventIEEE MTT-S International Microwave Symposium (IMS) 2016 - San Francisco, United States
Duration: 22 May 201627 May 2016


ConferenceIEEE MTT-S International Microwave Symposium (IMS) 2016
Abbreviated titleIMS 2016
Country/TerritoryUnited States
CitySan Francisco


  • High-efficiency
  • Power Amplifier
  • Doherty
  • Outphasing
  • mixed-mode
  • base station
  • power back off
  • RF


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