A 12μW NPN-based Temperature Sensor with a 18.4pJ.K2 FOM in 0.18μm BCD CMOS

Long Xu; Johan H. Huijsing; Kofi A.A. Makinwa

doi:10.1109/IWASI.2017.7974246

A 12μW NPN-based Temperature Sensor with a 18.4pJ.K² FOM in 0.18μm BCD CMOS

Long Xu, Johan H. Huijsing, Kofi A.A. Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Abstract

This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm² After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (-40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K² the lowest ever reported for an NPN-based sensor.

Original language	English
Title of host publication	Proceedings - 2017 7th International Workshop on Advances in Sensors and Interfaces, IWASI 2017
Place of Publication	Danvers, MA
Publisher	IEEE
Pages	180-182
Number of pages	3
ISBN (Electronic)	978-1-5090-6707-7
DOIs	https://doi.org/10.1109/IWASI.2017.7974246
Publication status	Published - 2017
Event	IWASI 2017: 7th IEEE International Workshop on Advances in Sensors and Interfaces - Vieste, Italy Duration: 15 Jun 2017 → 16 Jun 2017 Conference number: 7 http://iwasi2017.poliba.it/

Workshop

Workshop	IWASI 2017
Country/Territory	Italy
City	Vieste
Period	15/06/17 → 16/06/17
Internet address	http://iwasi2017.poliba.it/

Keywords

NPN
Temperature sensor
ΔΣ ADC

Access to Document

10.1109/IWASI.2017.7974246

Cite this

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title = "A 12μW NPN-based Temperature Sensor with a 18.4pJ.K2 FOM in 0.18μm BCD CMOS",

abstract = "This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm2 After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (-40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K2 the lowest ever reported for an NPN-based sensor.",

keywords = "NPN, Temperature sensor, ΔΣ ADC",

author = "Long Xu and Huijsing, {Johan H.} and Makinwa, {Kofi A.A.}",

year = "2017",

doi = "10.1109/IWASI.2017.7974246",

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publisher = "IEEE",

address = "United States",

note = "IWASI 2017 : 7th IEEE International Workshop on Advances in Sensors and Interfaces ; Conference date: 15-06-2017 Through 16-06-2017",

url = "http://iwasi2017.poliba.it/",

}

A 12μW NPN-based Temperature Sensor with a 18.4pJ.K² FOM in 0.18μm BCD CMOS. / Xu, Long; Huijsing, Johan H.; Makinwa, Kofi A.A.
Proceedings - 2017 7th International Workshop on Advances in Sensors and Interfaces, IWASI 2017. Danvers, MA: IEEE, 2017. p. 180-182 7974246.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AU - Huijsing, Johan H.

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AB - This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm2 After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (-40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K2 the lowest ever reported for an NPN-based sensor.

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