A 12μW NPN-based Temperature Sensor with a 18.4pJ.K2 FOM in 0.18μm BCD CMOS

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This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm2 After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (-40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K2 the lowest ever reported for an NPN-based sensor.

Original languageEnglish
Title of host publicationProceedings - 2017 7th International Workshop on Advances in Sensors and Interfaces, IWASI 2017
Place of PublicationDanvers, MA
Number of pages3
ISBN (Electronic)978-1-5090-6707-7
Publication statusPublished - 2017
EventIWASI 2017: 7th IEEE International Workshop on Advances in Sensors and Interfaces - Vieste, Italy
Duration: 15 Jun 201716 Jun 2017
Conference number: 7


WorkshopIWASI 2017
Internet address


  • NPN
  • Temperature sensor
  • ΔΣ ADC

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