A 12μW NPN-based Temperature Sensor with a 18.4pJ.K2 FOM in 0.18μm BCD CMOS

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Abstract

This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm2 After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (-40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K2 the lowest ever reported for an NPN-based sensor.

Original languageEnglish
Title of host publicationProceedings - 2017 7th International Workshop on Advances in Sensors and Interfaces, IWASI 2017
Place of PublicationDanvers, MA
PublisherIEEE
Pages180-182
Number of pages3
ISBN (Electronic)978-1-5090-6707-7
DOIs
Publication statusPublished - 2017
EventIWASI 2017: 7th IEEE International Workshop on Advances in Sensors and Interfaces - Vieste, Italy
Duration: 15 Jun 201716 Jun 2017
Conference number: 7
http://iwasi2017.poliba.it/

Workshop

WorkshopIWASI 2017
CountryItaly
CityVieste
Period15/06/1716/06/17
Internet address

Keywords

  • NPN
  • Temperature sensor
  • ΔΣ ADC

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    Xu, L., Huijsing, J. H., & Makinwa, K. A. A. (2017). A 12μW NPN-based Temperature Sensor with a 18.4pJ.K2 FOM in 0.18μm BCD CMOS. In Proceedings - 2017 7th International Workshop on Advances in Sensors and Interfaces, IWASI 2017 (pp. 180-182). [7974246] IEEE. https://doi.org/10.1109/IWASI.2017.7974246