A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from ¿70°C to 125°C

F Sebastiano, LJ Breems, KAA Makinwa, S Drago, DMW Leenaerts, B Nauta

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

39 Citations (Scopus)
Original languageEnglish
Title of host publicationDigest of Technical Papers - 2010 IEEE International Solid-State Circuits Conference
EditorsA Theuwissen et al
Place of PublicationPiscataway, NJ, USA
PublisherIEEE Society
Pages312-313
Number of pages2
ISBN (Print)978-1-4244-6033-5
DOIs
Publication statusPublished - 2010
Event2010 ISSCC, San Francisco, CA, USA - Piscataway, NJ, USA
Duration: 7 Feb 201010 Feb 2010

Publication series

Name
PublisherIEEE

Conference

Conference2010 ISSCC, San Francisco, CA, USA
Period7/02/1010/02/10

Bibliographical note

NEO

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