A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

F Sebastiano, LJ Breems, KAA Makinwa, S Drago, MW Domine, D Leenaerts, B Nauta

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	2591-2601
Number of pages	11
Journal	IEEE Journal of Solid State Circuits
Volume	45
Issue number	12
Publication status	Published - 2010

Keywords

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title = "A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C",

keywords = "professional journal papers, ZX CWTS JFIS >= 3.00",

author = "F Sebastiano and LJ Breems and KAA Makinwa and S Drago and MW Domine and D Leenaerts and B Nauta",

year = "2010",

language = "English",

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pages = "2591--2601",

journal = "IEEE Journal of Solid State Circuits",

issn = "0018-9200",

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TY - JOUR

T1 - A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

AU - Sebastiano, F

AU - Breems, LJ

AU - Makinwa, KAA

AU - Drago, S

AU - Domine, MW

AU - Leenaerts, D

AU - Nauta, B

PY - 2010

Y1 - 2010

KW - professional journal papers

KW - ZX CWTS JFIS >= 3.00

M3 - Article

SN - 0018-9200

VL - 45

SP - 2591

EP - 2601

JO - IEEE Journal of Solid State Circuits

JF - IEEE Journal of Solid State Circuits

IS - 12

ER -