A + 18dBm, 79-87.5 GHz bandwidth power amplifier in 0.13 um SiGe-BiCMOS

Y Zhao; JR Long; M Spirito; AB Akhnoukh

doi:10.1109/BCTM.2011.6082740

A + 18dBm, 79-87.5 GHz bandwidth power amplifier in 0.13 um SiGe-BiCMOS

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

15 Citations (Scopus)

Original language	English
Title of host publication	Proceedings 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Editors	JD Cressler et al
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	17-20
Number of pages	4
ISBN (Print)	978-1-61284-165-6
DOIs	https://doi.org/10.1109/BCTM.2011.6082740
Publication status	Published - 2011
Event	BCTM 2011, Atlanta, GA, USA - Piscataway, NJ, USA Duration: 9 Oct 2011 → 11 Oct 2011

Publication series

Name
Publisher	IEEE

Conference

Conference	BCTM 2011, Atlanta, GA, USA
Period	9/10/11 → 11/10/11

Keywords

Elektrotechniek
Techniek
Conf.proc. > 3 pag

Access to Document

10.1109/BCTM.2011.6082740

Cite this

@inproceedings{28a42bb0764947dd8af5808db4092b6e,

title = "A + 18dBm, 79-87.5 GHz bandwidth power amplifier in 0.13 um SiGe-BiCMOS",

keywords = "Elektrotechniek, Techniek, Conf.proc. > 3 pag",

author = "Y Zhao and JR Long and M Spirito and AB Akhnoukh",

year = "2011",

doi = "10.1109/BCTM.2011.6082740",

language = "English",

isbn = "978-1-61284-165-6",

publisher = "IEEE Society",

pages = "17--20",

editor = "{Cressler et al}, JD",

booktitle = "Proceedings 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)",

note = "BCTM 2011, Atlanta, GA, USA ; Conference date: 09-10-2011 Through 11-10-2011",

}

A + 18dBm, 79-87.5 GHz bandwidth power amplifier in 0.13 um SiGe-BiCMOS. / Zhao, Y; Long, JR; Spirito, M ; Akhnoukh, AB.

Proceedings 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM). ed. / JD Cressler et al. Piscataway, NJ, USA : IEEE Society, 2011. p. 17-20.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A + 18dBm, 79-87.5 GHz bandwidth power amplifier in 0.13 um SiGe-BiCMOS

AU - Zhao, Y

AU - Long, JR

AU - Spirito, M

AU - Akhnoukh, AB

PY - 2011

Y1 - 2011

KW - Elektrotechniek

KW - Techniek

KW - Conf.proc. > 3 pag

U2 - 10.1109/BCTM.2011.6082740

DO - 10.1109/BCTM.2011.6082740

M3 - Conference contribution

SN - 978-1-61284-165-6

SP - 17

EP - 20

BT - Proceedings 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

A2 - Cressler et al, JD

PB - IEEE Society

CY - Piscataway, NJ, USA

T2 - BCTM 2011, Atlanta, GA, USA

Y2 - 9 October 2011 through 11 October 2011

ER -