A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS

Nandish Mehta, Johan Huijsing, Vladimir Stojanović

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

This paper presents a class-AB driver for high-fidelity audio. It attains high-linearity at low-power by using an improved output stage biasing technique and a new frequency compensation scheme. Designed in standard 65nm CMOS, the driver delivers 5I.2mW peak power to 16Ω 0.33nF load, while consuming 0.97mW. It achieves -101.4dB THD+N over full audio band, the lowest ever reported linearity among sub-milliwatt CMOS class-AB drivers. Compared to prior works, it has >12dB better linearity and >7x higher unity-gain bandwidth, resulting in 2.5x improvement in linearity FOM (=Peak Load Power/ (Quiescent Power × THD+N[%])).

Original languageEnglish
Title of host publication2018 Symposium on VLSI Circuits Digest of Technical Papers
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages235-236
Number of pages2
Volume2018-June
ISBN (Electronic)978-1-5386-4214-6
DOIs
Publication statusPublished - 2018
Event2018 Symposia on VLSI Technology and Circuits: 2018 VLSI Technology Symposium - 2018 VLSI Circuits - Hilton Hawaiian Village, Honolulu, United States
Duration: 18 Jun 201822 Jun 2018

Conference

Conference2018 Symposia on VLSI Technology and Circuits
CountryUnited States
CityHonolulu
Period18/06/1822/06/18

Keywords

  • Linearity
  • Distortion
  • Damping
  • Topology
  • Bandwidth
  • Voltage measurement
  • Capacitors

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  • Cite this

    Mehta, N., Huijsing, J., & Stojanović, V. (2018). A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS. In 2018 Symposium on VLSI Circuits Digest of Technical Papers (Vol. 2018-June, pp. 235-236). [8502397] IEEE. https://doi.org/10.1109/VLSIC.2018.8502397