A 21-26GHz SiGe bipolar power amplifier MMIC

TS Cheung; JR Long

doi:10.1109/JSSC.2005.857424

A 21-26GHz SiGe bipolar power amplifier MMIC

TS Cheung, JR Long

Electronics

Research output: Contribution to journal › Article › Scientific › peer-review

88 Citations (Scopus)

Abstract

A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.

Original language	Undefined/Unknown
Pages (from-to)	2583-2597
Number of pages	15
Journal	IEEE Journal of Solid State Circuits
Volume	40
Issue number	12
DOIs	https://doi.org/10.1109/JSSC.2005.857424
Publication status	Published - 2005

Bibliographical note

niet eerder opgevoerd, sb

Keywords

Elektrotechniek
Techniek
CWTS 0.75 <= JFIS < 2.00

Access to Document

10.1109/JSSC.2005.857424

Cite this

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title = "A 21-26GHz SiGe bipolar power amplifier MMIC",

abstract = "A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.",

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author = "TS Cheung and JR Long",

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TY - JOUR

T1 - A 21-26GHz SiGe bipolar power amplifier MMIC

AU - Cheung, TS

AU - Long, JR

N1 - niet eerder opgevoerd, sb

PY - 2005

Y1 - 2005

N2 - A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.

AB - A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.

KW - Elektrotechniek

KW - Techniek

KW - CWTS 0.75 <= JFIS < 2.00

U2 - 10.1109/JSSC.2005.857424

DO - 10.1109/JSSC.2005.857424

M3 - Article

SN - 0018-9200

VL - 40

SP - 2583

EP - 2597

JO - IEEE Journal of Solid State Circuits

JF - IEEE Journal of Solid State Circuits

IS - 12

ER -