Abstract
This letter describes an NPN-based temperature sensor that achieves a 1-point trimmed inaccuracy of ±0.15 °C (3σ) from -15 to 85 °C while dissipating only 210 nW. It uses a dual-mode frontend to roughly halve the power consumption of conventional frontends. First, two NPNs are used to generate a well-defined PTAT bias current, then this current is sampled and applied to the same NPNs to generate well-defined PTAT and CTAT voltages. These voltages are then applied to a low-power tracking ΔΣ modulator-based ADC, which employs a digital filter to efficiently generate a multibit representation of temperature. A prototype fabricated in a 180-nm BCD process achieves 15-mK resolution in a 50 ms conversion time, which translates into a state-of-the-art resolution FoM of 2.3 pJK2.
Original language | English |
---|---|
Pages (from-to) | 272-275 |
Number of pages | 4 |
Journal | IEEE Solid-State Circuits Letters |
Volume | 5 |
DOIs | |
Publication status | Published - 2022 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Keywords
- BJT
- low leakage
- low power
- temperature sensor
- temperature-to-digital converter