A 210 nW NPN-Based Temperature Sensor With an Inaccuracy of ±0.15 °C (3σ) From −15 °C to 85 °C Utilizing Dual-Mode Frontend

Teruki Someya*, Vincent Van Hoek, Jan Angevare, Sining Pan, Kofi Makinwa

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

This letter describes an NPN-based temperature sensor that achieves a 1-point trimmed inaccuracy of ±0.15 °C (3σ) from -15 to 85 °C while dissipating only 210 nW. It uses a dual-mode frontend to roughly halve the power consumption of conventional frontends. First, two NPNs are used to generate a well-defined PTAT bias current, then this current is sampled and applied to the same NPNs to generate well-defined PTAT and CTAT voltages. These voltages are then applied to a low-power tracking ΔΣ modulator-based ADC, which employs a digital filter to efficiently generate a multibit representation of temperature. A prototype fabricated in a 180-nm BCD process achieves 15-mK resolution in a 50 ms conversion time, which translates into a state-of-the-art resolution FoM of 2.3 pJK2.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalIEEE Solid-State Circuits Letters
Volume5
DOIs
Publication statusPublished - 2022

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

  • BJT
  • low leakage
  • low power
  • temperature sensor
  • temperature-to-digital converter

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