This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2.
|Title of host publication||2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022|
|Place of Publication||Piscataway, NJ, USA|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||2|
|Publication status||Published - 2022|
|Event||2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States|
Duration: 12 Jun 2022 → 17 Jun 2022
|Name||Digest of Technical Papers - Symposium on VLSI Technology|
|Conference||2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022|
|Period||12/06/22 → 17/06/22|
Bibliographical noteGreen Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
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