A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2.

Original languageEnglish
Title of host publication2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages120-121
Number of pages2
ISBN (Electronic)978-1-6654-9772-5
DOIs
Publication statusPublished - 2022
Event2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States
Duration: 12 Jun 202217 Jun 2022

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2022-June
ISSN (Print)0743-1562

Conference

Conference2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/TerritoryUnited States
CityHonolulu
Period12/06/2217/06/22

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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