A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C

Teruki Someya; Vincent Van Hoek; Jan Angevare; Sining Pan; Kofi Makinwa

doi:10.1109/VLSITechnologyandCir46769.2022.9830266

A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C

Teruki Someya, Vincent Van Hoek, Jan Angevare, Sining Pan, Kofi Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

7 Citations (SciVal)

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Abstract

This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2.

Original language	English
Title of host publication	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	120-121
Number of pages	2
ISBN (Electronic)	978-1-6654-9772-5
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830266
Publication status	Published - 2022
Event	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States Duration: 12 Jun 2022 → 17 Jun 2022

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2022-June
ISSN (Print)	0743-1562

Conference

Conference	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/Territory	United States
City	Honolulu
Period	12/06/22 → 17/06/22

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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A_210nW_BJT_based_Temperature_Sensor_with_an_Inaccuracy_of_0.15C_3_from_15C_to_85CFinal published version, 985 KB

Cite this

Someya, T., Van Hoek, V., Angevare, J., Pan, S., & Makinwa, K. (2022). A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (pp. 120-121). (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June). IEEE. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830266

@inproceedings{c51de145c8334db98b53988cfa2ec908,

title = "A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C",

abstract = "This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2. ",

author = "Teruki Someya and {Van Hoek}, Vincent and Jan Angevare and Sining Pan and Kofi Makinwa",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

year = "2022",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830266",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "IEEE",

pages = "120--121",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",

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Someya, T, Van Hoek, V, Angevare, J, Pan, S & Makinwa, K 2022, A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C. in 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2022-June, IEEE, Piscataway, NJ, USA, pp. 120-121, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 12/06/22. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830266

A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C. / Someya, Teruki; Van Hoek, Vincent; Angevare, Jan et al.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Piscataway, NJ, USA: IEEE, 2022. p. 120-121 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AU - Pan, Sining

AU - Makinwa, Kofi

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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N2 - This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2.

AB - This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2.

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BT - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

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Someya T, Van Hoek V, Angevare J, Pan S, Makinwa K. A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Piscataway, NJ, USA: IEEE. 2022. p. 120-121. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830266

A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C

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