A 30-GHz Class-F23 Oscillator in 28nm CMOS using harmonic extraction and achieving 120 kHz l/f3 Corner

Yizhe Hu, Teerachot Siriburanon, Robert Bogdan Staszewski

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

13 Citations (Scopus)

Abstract

This paper presents a mmW frequency generation stage aimed at minimizing phase noise via waveform shaping and harmonic extraction while suppressing flicker noise upconversion via proper harmonic terminations. A second-harmonic tank resonance is assisted by a proposed embedded decoupling capacitor inside a transformer for shortest and well controlled common-mode current return path. Class-F operation with third-harmonic boosting and extraction techniques allow maintaining high quality factor of a 10 GHz tank at the 30 GHz frequency generation while providing implicit divide-by-3 functionality. The proposed 27.3-31.2 GHz oscillator is implemented in 28-nm CMOS. It achieves phase noise of-106 dBc/Hz at 1-MHz offset and figure-of-merit (FoM) of -184 dB at 27.3GHz. Its flicker phase-noise (1/f3) corner of 120 kHz is an order-of-magnitude better than currently achievable at mmW.

Original languageEnglish
Title of host publicationESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference
PublisherIEEE
Pages87-90
Number of pages4
ISBN (Electronic)978-1-5090-5025-3
ISBN (Print)978-1-5090-5026-0
DOIs
Publication statusPublished - 2 Nov 2017
Externally publishedYes
EventESSCIRC 2017: 43rd IEEE European Solid State Circuits Conference - Leuven, Belgium
Duration: 11 Sept 201714 Sept 2017

Conference

ConferenceESSCIRC 2017
Country/TerritoryBelgium
CityLeuven
Period11/09/1714/09/17

Keywords

  • 30GHz
  • 5G communication
  • Low flicker noise corner
  • Low phase noise
  • Oscillator

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