TY - GEN
T1 - A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies
AU - Vlachogiannakis, Gerasimos
AU - Spirito, Marco
AU - Pertijs, Michiel
AU - de Vreede, Leonardus
PY - 2016
Y1 - 2016
N2 - This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented architecture is compact, accurate and fast, thus suitable for the realization of future real-time, microwave-based, 2-D dielectric imagers. Measurements on liquids show an rms error of <;1% over a frequency range of 0.1 - 12 GHz.
AB - This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented architecture is compact, accurate and fast, thus suitable for the realization of future real-time, microwave-based, 2-D dielectric imagers. Measurements on liquids show an rms error of <;1% over a frequency range of 0.1 - 12 GHz.
KW - Permittivity
KW - Bridge circuits
KW - Chemical and biological sensors
KW - CMOS integrated circuits
KW - Microwave sensors
U2 - 10.1109/MWSYM.2016.7540260
DO - 10.1109/MWSYM.2016.7540260
M3 - Conference contribution
SN - 978-1-5090-0699-1
SP - 1
EP - 4
BT - 2016 IEEE MTT-S International Microwave Symposium (IMS 2016)
PB - IEEE
CY - Piscataway
ER -