A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies

Gerasimos Vlachogiannakis; Marco Spirito; Michiel Pertijs; Leonardus de Vreede

doi:10.1109/MWSYM.2016.7540260

A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies

Gerasimos Vlachogiannakis, Marco Spirito, Michiel Pertijs, Leonardus de Vreede

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

Abstract

This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented architecture is compact, accurate and fast, thus suitable for the realization of future real-time, microwave-based, 2-D dielectric imagers. Measurements on liquids show an rms error of <;1% over a frequency range of 0.1 - 12 GHz.

Original language	English
Title of host publication	2016 IEEE MTT-S International Microwave Symposium (IMS 2016)
Place of Publication	Piscataway
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-5090-0698-4
ISBN (Print)	978-1-5090-0699-1
DOIs	https://doi.org/10.1109/MWSYM.2016.7540260
Publication status	Published - 2016

Keywords

Permittivity
Bridge circuits
Chemical and biological sensors
CMOS integrated circuits
Microwave sensors

Access to Document

10.1109/MWSYM.2016.7540260

Cite this

@inproceedings{d77864d190594f29949036ac28b287f9,

title = "A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies",

abstract = "This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented architecture is compact, accurate and fast, thus suitable for the realization of future real-time, microwave-based, 2-D dielectric imagers. Measurements on liquids show an rms error of <;1\% over a frequency range of 0.1 - 12 GHz.",

keywords = "Permittivity, Bridge circuits, Chemical and biological sensors, CMOS integrated circuits, Microwave sensors",

author = "Gerasimos Vlachogiannakis and Marco Spirito and Michiel Pertijs and \{de Vreede\}, Leonardus",

year = "2016",

doi = "10.1109/MWSYM.2016.7540260",

language = "English",

isbn = "978-1-5090-0699-1",

pages = "1--4",

booktitle = "2016 IEEE MTT-S International Microwave Symposium (IMS 2016)",

publisher = "IEEE",

address = "United States",

}

A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies. / Vlachogiannakis, Gerasimos; Spirito, Marco ; Pertijs, Michiel et al.
2016 IEEE MTT-S International Microwave Symposium (IMS 2016) . Piscataway: IEEE, 2016. p. 1-4.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies

AU - Vlachogiannakis, Gerasimos

AU - Spirito, Marco

AU - Pertijs, Michiel

AU - de Vreede, Leonardus

PY - 2016

Y1 - 2016

N2 - This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented architecture is compact, accurate and fast, thus suitable for the realization of future real-time, microwave-based, 2-D dielectric imagers. Measurements on liquids show an rms error of <;1% over a frequency range of 0.1 - 12 GHz.

AB - This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented architecture is compact, accurate and fast, thus suitable for the realization of future real-time, microwave-based, 2-D dielectric imagers. Measurements on liquids show an rms error of <;1% over a frequency range of 0.1 - 12 GHz.

KW - Permittivity

KW - Bridge circuits

KW - Chemical and biological sensors

KW - CMOS integrated circuits

KW - Microwave sensors

UR - https://www.scopus.com/pages/publications/84985037066

U2 - 10.1109/MWSYM.2016.7540260

DO - 10.1109/MWSYM.2016.7540260

M3 - Conference contribution

SN - 978-1-5090-0699-1

SP - 1

EP - 4

BT - 2016 IEEE MTT-S International Microwave Symposium (IMS 2016)

PB - IEEE

CY - Piscataway

ER -

A 40-nm CMOS Permittivity Sensor for Chemical/Biological Material Characterization at RF/Microwave Frequencies

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Miniaturized CMOS Circuits and Measurement Techniques for Broadband Dielectric Spectroscopy

Cite this