A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power

Z. Hu; L.C.N. de Vreede; M.S. Alavi; D.A. Calvillo-Cortes; R.B. Staszewski; S. He

doi:10.1109/RFIC.2016.7508287

A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power

Z. Hu, L.C.N. de Vreede, M.S. Alavi, D.A. Calvillo-Cortes, R.B. Staszewski, S. He

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

29 Citations (Scopus)

Abstract

In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach.

Original language	English
Title of host publication	Proceedings of the 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Editors	S. Mehta, L. Lin
Place of Publication	Danvers
Publisher	IEEE
Pages	206-209
Number of pages	4
ISBN (Electronic)	978-1-4673-8651-7
ISBN (Print)	978-1-4673-8652-4
DOIs	https://doi.org/10.1109/RFIC.2016.7508287
Publication status	Published - May 2016
Event	RFIC 2016: IEEE Radio Frequency Integrated Circuits Symposium - San Francisco, CA, United States Duration: 22 May 2016 → 24 May 2016 https://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=37753

Conference

Conference	RFIC 2016
Abbreviated title	RFIC
Country/Territory	United States
City	San Francisco, CA
Period	22/05/16 → 24/05/16
Internet address	https://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=37753

Keywords

CMOS integrated circuits
differential amplifiers
digital-analogue conversion
radiofrequency power amplifiers
CMOS
RFDAC-based outphasing power amplifier
ROPA drain
complementary metal oxide semiconductor
differential quasiload-insensitive class-E branch PA
digital amplitude control word
efficiency 49.2 percent
frequency 5.9 GHz
power back-off
radiofrequency digital-to-analog converter
segmentation technique
size 40 nm
word length 3 bit
Bandwidth
Dynamic range
Loading
Modulation
Power generation
Switches
CMOS power amplifier
Chireix combiner
Class-E
Outphasing power amplifier
RFDAC

Access to Document

10.1109/RFIC.2016.7508287

Cite this

Hu, Z., de Vreede, L. C. N., Alavi, M. S., Calvillo-Cortes, D. A., Staszewski, R. B., & He, S. (2016). A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power. In S. Mehta, & L. Lin (Eds.), Proceedings of the 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (pp. 206-209). IEEE. https://doi.org/10.1109/RFIC.2016.7508287

@inproceedings{01eae8ca034d415ab2b246581ebddc89,

title = "A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power",

abstract = "In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach. ",

keywords = "CMOS integrated circuits, differential amplifiers, digital-analogue conversion, radiofrequency power amplifiers, CMOS, RFDAC-based outphasing power amplifier, ROPA drain, complementary metal oxide semiconductor, differential quasiload-insensitive class-E branch PA, digital amplitude control word, efficiency 49.2 percent, frequency 5.9 GHz, power back-off, radiofrequency digital-to-analog converter, segmentation technique, size 40 nm, word length 3 bit, Bandwidth, Dynamic range, Loading, Modulation, Power generation, Switches, CMOS power amplifier, Chireix combiner, Class-E, Outphasing power amplifier, RFDAC",

author = "Z. Hu and {de Vreede}, L.C.N. and M.S. Alavi and D.A. Calvillo-Cortes and R.B. Staszewski and S. He",

year = "2016",

month = may,

doi = "10.1109/RFIC.2016.7508287",

language = "English",

isbn = "978-1-4673-8652-4 ",

pages = "206--209",

editor = "S. Mehta and L. Lin",

booktitle = "Proceedings of the 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)",

publisher = "IEEE",

address = "United States",

note = "RFIC 2016 : IEEE Radio Frequency Integrated Circuits Symposium, RFIC ; Conference date: 22-05-2016 Through 24-05-2016",

url = "https://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=37753",

}

Hu, Z, de Vreede, LCN , Alavi, MS, Calvillo-Cortes, DA, Staszewski, RB & He, S 2016, A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power. in S Mehta & L Lin (eds), Proceedings of the 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, Danvers, pp. 206-209, RFIC 2016, San Francisco, CA, United States, 22/05/16. https://doi.org/10.1109/RFIC.2016.7508287

A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power. / Hu, Z.; de Vreede, L.C.N.; Alavi, M.S. et al.
Proceedings of the 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). ed. / S. Mehta; L. Lin. Danvers: IEEE, 2016. p. 206-209.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AU - Hu, Z.

AU - de Vreede, L.C.N.

AU - Alavi, M.S.

AU - Calvillo-Cortes, D.A.

AU - Staszewski, R.B.

AU - He, S.

PY - 2016/5

Y1 - 2016/5

N2 - In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach.

AB - In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach.

KW - CMOS integrated circuits

KW - differential amplifiers

KW - digital-analogue conversion

KW - radiofrequency power amplifiers

KW - CMOS

KW - RFDAC-based outphasing power amplifier

KW - ROPA drain

KW - complementary metal oxide semiconductor

KW - differential quasiload-insensitive class-E branch PA

KW - digital amplitude control word

KW - efficiency 49.2 percent

KW - frequency 5.9 GHz

KW - power back-off

KW - radiofrequency digital-to-analog converter

KW - segmentation technique

KW - size 40 nm

KW - word length 3 bit

KW - Bandwidth

KW - Dynamic range

KW - Loading

KW - Modulation

KW - Power generation

KW - Switches

KW - CMOS power amplifier

KW - Chireix combiner

KW - Class-E

KW - Outphasing power amplifier

KW - RFDAC

U2 - 10.1109/RFIC.2016.7508287

DO - 10.1109/RFIC.2016.7508287

M3 - Conference contribution

SN - 978-1-4673-8652-4

SP - 206

EP - 209

BT - Proceedings of the 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

A2 - Mehta, S.

A2 - Lin, L.

PB - IEEE

CY - Danvers

T2 - RFIC 2016

Y2 - 22 May 2016 through 24 May 2016

ER -

A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power

Abstract

Conference

Keywords

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