A 60 GHz-Band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS

WL Chan; JR Long; M Spirito; J Pekarik

doi:10.1109/ISSCC.2009.4977467

A 60 GHz-Band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS

WL Chan, JR Long, M Spirito, J Pekarik

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

109 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers
Editors	s.n.
Place of Publication	Los Alamitos, CA, USA
Publisher	IEEE
Pages	380-381
Number of pages	2
ISBN (Print)	978-1-4244-3457-2
DOIs	https://doi.org/10.1109/ISSCC.2009.4977467
Publication status	Published - 2009
Event	ISSCC 2009, IEEE International Solid-State Circuits Conference, San Francisco, USA - Los Alamitos, CA, USA Duration: 8 Feb 2009 → 12 Feb 2009

Publication series

Name
Publisher	IEEE

Conference

Conference	ISSCC 2009, IEEE International Solid-State Circuits Conference, San Francisco, USA
Period	8/02/09 → 12/02/09

Keywords

conference contrib. refereed
Geen BTA classificatie

Access to Document

10.1109/ISSCC.2009.4977467

Cite this

@inproceedings{709573503f2d49f6b181620fe0d25821,

title = "A 60 GHz-Band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS",

keywords = "conference contrib. refereed, Geen BTA classificatie",

author = "WL Chan and JR Long and M Spirito and J Pekarik",

year = "2009",

doi = "10.1109/ISSCC.2009.4977467",

language = "Undefined/Unknown",

isbn = "978-1-4244-3457-2",

publisher = "IEEE",

pages = "380--381",

editor = "s.n.",

booktitle = "Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers",

address = "United States",

note = "ISSCC 2009, IEEE International Solid-State Circuits Conference, San Francisco, USA ; Conference date: 08-02-2009 Through 12-02-2009",

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Chan, WL, Long, JR, Spirito, M & Pekarik, J 2009, A 60 GHz-Band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS. in s.n. (ed.), Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers. IEEE, Los Alamitos, CA, USA, pp. 380-381, ISSCC 2009, IEEE International Solid-State Circuits Conference, San Francisco, USA, 8/02/09. https://doi.org/10.1109/ISSCC.2009.4977467

A 60 GHz-Band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS. / Chan, WL; Long, JR; Spirito, M et al.
Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers. ed. / s.n. Los Alamitos, CA, USA: IEEE, 2009. p. 380-381.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - A 60 GHz-Band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS

AU - Chan, WL

AU - Long, JR

AU - Spirito, M

AU - Pekarik, J

PY - 2009

Y1 - 2009

KW - conference contrib. refereed

KW - Geen BTA classificatie

U2 - 10.1109/ISSCC.2009.4977467

DO - 10.1109/ISSCC.2009.4977467

M3 - Conference contribution

SN - 978-1-4244-3457-2

SP - 380

EP - 381

BT - Proceedings of the IEEE International Solid-State Circuits Conference - Digest of Technical Papers

A2 - s.n., null

PB - IEEE

CY - Los Alamitos, CA, USA

T2 - ISSCC 2009, IEEE International Solid-State Circuits Conference, San Francisco, USA

Y2 - 8 February 2009 through 12 February 2009

ER -