A 6800-μ m2 Resistor-Based Temperature Sensor with ±0.35 °c (3σ) Inaccuracy in 180-nm CMOS

Jan A. Angevare*, Kofi A.A. Makinwa

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)
170 Downloads (Pure)

Abstract

This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 μ m2, thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3 σ) inaccuracy from-35 °C to 125 °C. Furthermore, it achieves 0.12 °C (1 σ) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter.

Original languageEnglish
Article number8753607
Pages (from-to)2649-2657
Number of pages9
JournalIEEE Journal of Solid-State Circuits
Volume54
Issue number10
DOIs
Publication statusPublished - 2019

Bibliographical note

Accepted author manuscript

Keywords

  • CMOS temperature sensor
  • phase-to-digital converter
  • thermal sensing
  • voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator (PDΣΔM)
  • Wien bridge (WB)

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