A 6800-μm2 Resistor-Based Temperature Sensor in 180-nm CMOS

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2 Citations (Scopus)

Abstract

A resistor-based temperature sensor has been realized in 180 nm CMOS for SoC thermal management applications. Occupying only 6800 μm2, it is the smallest resistor-based temperature sensor ever reported. This is achieved by employing a compact highly-digital VCO-based ADC. After a 2-point trim, the sensor achieves an inaccuracy of ±0.35 °C (3σ) in a temperature range from-35 °C to 125 °C. By achieving a resolution of 0.12 °C (rms) at 2.8kSa/s, it can track the fast thermal-transients in SoCs.

Original languageEnglish
Title of host publication2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings
EditorsTadahiro Kuroda
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages43-46
Number of pages4
ISBN (Electronic)978-1-5386-6412-4
DOIs
Publication statusPublished - 2018
Event2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Tainan, Taiwan
Duration: 5 Nov 20187 Nov 2018

Conference

Conference2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018
CountryTaiwan
CityTainan
Period5/11/187/11/18

Keywords

  • Temperature sensor
  • Thermal Sensing
  • Wien-Bridge

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    Angevare, J., & Makinwa, K. A. A. (2018). A 6800-μm2 Resistor-Based Temperature Sensor in 180-nm CMOS. In T. Kuroda (Ed.), 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings (pp. 43-46). [8579332] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ASSCC.2018.8579332