A BJT-based CMOS Temperature Sensor with Duty-cycle-modulated Output and ±0.54 ∘C (3σ) Inaccuracy from -40 ∘C to 125 ∘C

Zhenyan Huang, Zhong Tang, Xiao Peng Yu, Zheng Shi, Ling Lin, Nick Nianxiong Tan

Research output: Contribution to journalArticleScientificpeer-review

1 Downloads (Pure)

Abstract

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (VPTAT) and a complementary to absolute temperature voltage (VCTAT), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of VPTAT. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-m CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 ∘C (3σ) from -40 ∘C to 125 ∘C.
Original languageEnglish
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
DOIs
Publication statusPublished - 2021

Keywords

  • BJT
  • Circuits and systems
  • CMOS temperature sensor
  • duty-cycle
  • Hysteresis
  • KC-DEM.
  • low relative inaccuracy
  • Resistance
  • Resistors
  • Standards
  • Switches
  • Temperature sensors

Fingerprint Dive into the research topics of 'A BJT-based CMOS Temperature Sensor with Duty-cycle-modulated Output and ±0.54 ∘C (3σ) Inaccuracy from -40 ∘C to 125 ∘C'. Together they form a unique fingerprint.

Cite this