A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Zhenyan Huang, Zhong Tang, Xiao Peng Yu, Zheng Shi, Ling Lin, Nick Nianxiong Tan

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
70 Downloads (Pure)

Abstract

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.

Original languageEnglish
Article number9383810
Pages (from-to)2780-2784
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume68
Issue number8
DOIs
Publication statusPublished - 2021

Keywords

  • BJT
  • CMOS temperature sensor
  • KC-DEM
  • duty-cycle
  • low relative inaccuracy

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