A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Zhenyan Huang; Zhong Tang; Xiao Peng Yu; Zheng Shi; Ling Lin; Nick Nianxiong Tan

doi:10.1109/TCSII.2021.3068283

A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Zhenyan Huang, Zhong Tang, Xiao Peng Yu, Zheng Shi, Ling Lin, Nick Nianxiong Tan

Electronic Instrumentation

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

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Abstract

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.

Original language	English
Article number	9383810
Pages (from-to)	2780-2784
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	68
Issue number	8
DOIs	https://doi.org/10.1109/TCSII.2021.3068283
Publication status	Published - 2021

Keywords

BJT
CMOS temperature sensor
KC-DEM
duty-cycle
low relative inaccuracy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/TCSII.2021.3068283

09383810Accepted author manuscript, 2.45 MB

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title = "A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c",

abstract = "This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.",

keywords = "BJT, CMOS temperature sensor, KC-DEM, duty-cycle, low relative inaccuracy",

author = "Zhenyan Huang and Zhong Tang and Yu, {Xiao Peng} and Zheng Shi and Ling Lin and Tan, {Nick Nianxiong}",

year = "2021",

doi = "10.1109/TCSII.2021.3068283",

language = "English",

volume = "68",

pages = "2780--2784",

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T1 - A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

AU - Huang, Zhenyan

AU - Tang, Zhong

AU - Yu, Xiao Peng

AU - Shi, Zheng

AU - Lin, Ling

AU - Tan, Nick Nianxiong

PY - 2021

Y1 - 2021

N2 - This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.

AB - This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output. Dynamic element matching with Kelvin connection (KC-DEM) is applied to improve the accuracy of V_{PTAT}. To enhance the robustness of the sensor, a continuous-time dynamic single-threshold hysteresis comparator with high energy efficiency is proposed. Implemented in a standard 0.13-{m} CMOS process, the sensor has an active area of 0.086 mm2 and achieves an inaccuracy of ±0.54 °C (3) from -40 °C to 125 °C.

KW - BJT

KW - CMOS temperature sensor

KW - KC-DEM

KW - duty-cycle

KW - low relative inaccuracy

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DO - 10.1109/TCSII.2021.3068283

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VL - 68

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JO - IEEE Transactions on Circuits and Systems II: Express Briefs

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M1 - 9383810

ER -

A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

Abstract

Keywords

UN SDGs

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