Abstract
This paper presents the most accurate BJT-based CMOS temperature-to-digital converter (TDC) ever reported, with an inaccuracy of ±60mK (3σ) from -70°C to 125°C. This is 2× better than the state-of-the-art, despite being implemented in a process (160nm) that only offers low-βF (<;5) PNPs. It is also the most energy-efficient ever reported, with a resolution FOM of 7.3pJ°C2. This level of performance is achieved by an improved βF-compensation scheme, the use of dynamic error correction techniques to suppress non-BJT related errors and the use of an energy-efficient zoom-ADC based on current-reuse OTAs. These techniques also result in very low power-supply sensitivity (12mK/V), thus maintaining TDC accuracy for supply voltages ranging from 1.5V to 2V.
Original language | English |
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Title of host publication | 2016 IEEE Symposium on VLSI Circuits, VLSI-Circuits 2016 |
Subtitle of host publication | Digest of Technical Papers |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Electronic) | 978-1-5090-0635-9 |
ISBN (Print) | 978-1-5090-0636-6 |
DOIs | |
Publication status | Published - Jun 2016 |
Event | 30th IEEE Symposium on VLSI Circuits, VLSI Circuits 2016 - Honolulu, United States Duration: 14 Jun 2016 → 17 Jun 2016 |
Conference
Conference | 30th IEEE Symposium on VLSI Circuits, VLSI Circuits 2016 |
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Country/Territory | United States |
City | Honolulu |
Period | 14/06/16 → 17/06/16 |
Keywords
- Temperature measurement
- Sensitivity
- Voltage measurement
- Energy efficiency
- Substrates
- Sensors
- Mirrors