Abstract
The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW exhibits significantly enhanced field confinement as compared with the traditional low-index slot waveguides and the hybrid metal dielectric slot waveguides. By controlling the thicknesses of different layers, an optimized HPSW structure with a better tradeoff between field confinement and propagation length has been simultaneously achieved.
Original language | English |
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Pages (from-to) | 456-458 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2016 |
Keywords
- multi-layer structure
- Hybrid plasmonic slot waveguide
- field confinement