A CMOS Resistor-Based Temperature Sensor with a 10fJ·K2 Resolution FoM and 0.4°C (30) Inaccuracy from -55°C to 125°C after a 1-point Trim

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Abstract

Energy efficiency and accuracy are important specifications of CMOS temperature sensors. BJT -based sensors achieve state-of-the-art accuracy [1], while Wheatstone-bridge (WhB) sensors achieve lower accuracy but state-of-the-art energy efficiency [2], [3]. This paper presents a WhB sensor that is read out by an energy-efficient continuous-time delta-sigma modulator (CTDSM). Compared to [2], [3], the modulator achieves better energy efficiency with the help of a return-to-CM (RCM) DAC and an OTA with a tail-resistor linearization scheme. Moreover, better accuracy is achieved by embedding the DAC in the bridge and by using more sensitive silicided-diffusion resistors instead of silicided-poly resistors. Compared to the state-of-the-art [3], the proposed sensor achieves a 2× improvement in resolution FoM (10fJ.K2), and a 2× improvement in inaccuracy (0.4° C(3σ) from -55° C to 125°C after a 1-point trim).

Original languageEnglish
Title of host publication2020 IEEE International Solid-State Circuits Conference, ISSCC 2020
PublisherIEEE
Pages68-70
Number of pages3
ISBN (Electronic)978-1-7281-3205-1
ISBN (Print)978-1-7281-3206-8
DOIs
Publication statusPublished - 2020
Event2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 - San Francisco, United States
Duration: 16 Feb 202020 Feb 2020

Conference

Conference2020 IEEE International Solid-State Circuits Conference, ISSCC 2020
CountryUnited States
CitySan Francisco
Period16/02/2020/02/20

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