A CMOS temperature sensor with a 3¿ inaccuracy of ±0.1 °C from -55°C to 125°C

MAP Pertijs; KAA Makinwa; JH Huijsing

doi:doi:10.1109/ISSCC.2005.1493957

A CMOS temperature sensor with a 3¿ inaccuracy of ±0.1 °C from -55°C to 125°C

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

A smart temperature sensor is accurate to within /spl plusmn/0.1/spl deg/C (3/spl sigma/) over the full military temperature range of -55/spl deg/C to 125/spl deg/C. This 5/spl times/ improvement is achieved using DEM, a current-gain independent PTAT bias circuit, and a low-offset /spl Delta//spl Sigma/ ADC combining chopping and CDS. The sensor is fabricated in 0.7/spl mu/m 2M1P CMOS with 4.5mm/sup 2/ area and draws 75/spl mu/A.

Original language	Undefined/Unknown
Title of host publication	2005 IEEE international solid-state circuits conference, digest of technical papers
Editors	LC Fujino
Place of Publication	Piscataway
Publisher	IEEE Society
Pages	238-239+596
ISBN (Print)	0-7803-8904-2
DOIs	https://doi.org/doi:10.1109/ISSCC.2005.1493957
Publication status	Published - 2005
Event	2005 IEEE international solid-state circuits conference (ISSCC), San Francisco, USA - Piscataway Duration: 6 Feb 2005 → 10 Feb 2005

Publication series

Name
Publisher	IEEE

Name	IEEE International Solid State Circuits Conference. Digest of Technical Papers
Volume	48
ISSN (Print)	0193-6530

Conference

Conference	2005 IEEE international solid-state circuits conference (ISSCC), San Francisco, USA
Period	6/02/05 → 10/02/05

Keywords

conference contrib. refereed
Geen BTA classificatie

Access to Document

doi:10.1109/ISSCC.2005.1493957

Cite this

Pertijs, MAP., Makinwa, KAA., & Huijsing, JH. (2005). A CMOS temperature sensor with a 3¿ inaccuracy of ±0.1 °C from -55°C to 125°C. In LC. Fujino (Ed.), 2005 IEEE international solid-state circuits conference, digest of technical papers (pp. 238-239+596). (IEEE International Solid State Circuits Conference. Digest of Technical Papers; Vol. 48). IEEE Society. https://doi.org/doi:10.1109/ISSCC.2005.1493957

@inproceedings{b8a8df6874344557a0c30bbeed9c5f70,

title = "A CMOS temperature sensor with a 3¿ inaccuracy of ±0.1 °C from -55°C to 125°C",

abstract = "A smart temperature sensor is accurate to within /spl plusmn/0.1/spl deg/C (3/spl sigma/) over the full military temperature range of -55/spl deg/C to 125/spl deg/C. This 5/spl times/ improvement is achieved using DEM, a current-gain independent PTAT bias circuit, and a low-offset /spl Delta//spl Sigma/ ADC combining chopping and CDS. The sensor is fabricated in 0.7/spl mu/m 2M1P CMOS with 4.5mm/sup 2/ area and draws 75/spl mu/A.",

keywords = "conference contrib. refereed, Geen BTA classificatie",

author = "MAP Pertijs and KAA Makinwa and JH Huijsing",

year = "2005",

doi = "doi:10.1109/ISSCC.2005.1493957",

language = "Undefined/Unknown",

isbn = "0-7803-8904-2",

publisher = "IEEE Society",

pages = "238--239+596",

editor = "LC Fujino",

booktitle = "2005 IEEE international solid-state circuits conference, digest of technical papers",

note = "2005 IEEE international solid-state circuits conference (ISSCC), San Francisco, USA ; Conference date: 06-02-2005 Through 10-02-2005",

}

Pertijs, MAP , Makinwa, KAA & Huijsing, JH 2005, A CMOS temperature sensor with a 3¿ inaccuracy of ±0.1 °C from -55°C to 125°C. in LC Fujino (ed.), 2005 IEEE international solid-state circuits conference, digest of technical papers. IEEE International Solid State Circuits Conference. Digest of Technical Papers, vol. 48, IEEE Society, Piscataway, pp. 238-239+596, 2005 IEEE international solid-state circuits conference (ISSCC), San Francisco, USA, 6/02/05. https://doi.org/doi:10.1109/ISSCC.2005.1493957

A CMOS temperature sensor with a 3¿ inaccuracy of ±0.1 °C from -55°C to 125°C. / Pertijs, MAP ; Makinwa, KAA ; Huijsing, JH.
2005 IEEE international solid-state circuits conference, digest of technical papers. ed. / LC Fujino. Piscataway: IEEE Society, 2005. p. 238-239+596 (IEEE International Solid State Circuits Conference. Digest of Technical Papers; Vol. 48).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AU - Huijsing, JH

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N2 - A smart temperature sensor is accurate to within /spl plusmn/0.1/spl deg/C (3/spl sigma/) over the full military temperature range of -55/spl deg/C to 125/spl deg/C. This 5/spl times/ improvement is achieved using DEM, a current-gain independent PTAT bias circuit, and a low-offset /spl Delta//spl Sigma/ ADC combining chopping and CDS. The sensor is fabricated in 0.7/spl mu/m 2M1P CMOS with 4.5mm/sup 2/ area and draws 75/spl mu/A.

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KW - Geen BTA classificatie

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Pertijs MAP , Makinwa KAA , Huijsing JH. A CMOS temperature sensor with a 3¿ inaccuracy of ±0.1 °C from -55°C to 125°C. In Fujino LC, editor, 2005 IEEE international solid-state circuits conference, digest of technical papers. Piscataway: IEEE Society. 2005. p. 238-239+596. (IEEE International Solid State Circuits Conference. Digest of Technical Papers). doi: doi:10.1109/ISSCC.2005.1493957