A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM

Sining Pan, Hui Jiang, Kofi A.A. Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

18 Citations (Scopus)
86 Downloads (Pure)

Abstract

This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μK in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).
Original languageEnglish
Title of host publicationDigest of Technical Papers - 2017 Symposium on VLSI Circuits
Place of PublicationPiscataway, NJ
PublisherIEEE
PagesC82-C83
Number of pages2
ISBN (Electronic)978-4-86348-614-0
ISBN (Print)978-4-86348-606-5
DOIs
Publication statusPublished - 2017
Event2017 Symposium on VLSI Technology and Circuits: 2017 VLSI Technology Symposium - 2017 VLSI Circuits Symposium - Kyoto, Japan
Duration: 5 Jun 20178 Jun 2017
http://vlsisymposium.org/2017/

Conference

Conference2017 Symposium on VLSI Technology and Circuits
Country/TerritoryJapan
CityKyoto
Period5/06/178/06/17
Internet address

Bibliographical note

C7-3

Keywords

  • Bridge circuits
  • Temperature sensors
  • Resistors
  • Energy resolution
  • Temperature measurement
  • Energy efficiency
  • Sensitivity

Fingerprint

Dive into the research topics of 'A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM'. Together they form a unique fingerprint.

Cite this