Abstract
This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μK in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).
Original language | English |
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Title of host publication | Digest of Technical Papers - 2017 Symposium on VLSI Circuits |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | C82-C83 |
Number of pages | 2 |
ISBN (Electronic) | 978-4-86348-614-0 |
ISBN (Print) | 978-4-86348-606-5 |
DOIs | |
Publication status | Published - 2017 |
Event | 2017 Symposium on VLSI Technology and Circuits: 2017 VLSI Technology Symposium - 2017 VLSI Circuits Symposium - Kyoto, Japan Duration: 5 Jun 2017 → 8 Jun 2017 http://vlsisymposium.org/2017/ |
Conference
Conference | 2017 Symposium on VLSI Technology and Circuits |
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Country/Territory | Japan |
City | Kyoto |
Period | 5/06/17 → 8/06/17 |
Internet address |
Bibliographical note
C7-3Keywords
- Bridge circuits
- Temperature sensors
- Resistors
- Energy resolution
- Temperature measurement
- Energy efficiency
- Sensitivity