Abstract
Photodiodes based on the Boron on Silicon junction (B-Si) show excellent responsivity to DUV and VUV photons, radiation hardness, and impressive electrical characteristics. However, the proposed models describing the junction formation mechanism do not sufficiently predict the junction's properties. We analyze two previously proposed models: the ultra-shallow p-n junction model and the charge transfer heterojunction model. We additionally apply the Schottky-Mott theory, a semiconductor-metal heterojunction model. Both the commonalities and incompatibilities between these models are discussed.
| Original language | English |
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| Title of host publication | 2024 33rd International Scientific Conference Electronics, ET 2024 - Proceedings |
| Publisher | IEEE |
| Number of pages | 6 |
| ISBN (Electronic) | 9798350376449 |
| DOIs | |
| Publication status | Published - 2024 |
| Event | 33rd International Scientific Conference Electronics, ET 2024 - Sozopol, Bulgaria Duration: 17 Sept 2024 → 19 Sept 2024 |
Publication series
| Name | 2024 33rd International Scientific Conference Electronics, ET 2024 - Proceedings |
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Conference
| Conference | 33rd International Scientific Conference Electronics, ET 2024 |
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| Country/Territory | Bulgaria |
| City | Sozopol |
| Period | 17/09/24 → 19/09/24 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Keywords
- barrier height
- charge-transfer junction model
- First-principles
- heterojunction
- p-n junction
- Schottky-Mott theory