Abstract
This paper presents a noise analysis and noise measurementsof n-type and p-type pixels with correlated multiple sampling(CMS) technique. The output noise power spectral density (PSD)of both pixel types with different CMS noise reduction factors havebeen simulated and calculated in the spectral domain. Forvalidation, two groups of test pixel have been fabricated with astate-of-the-art n-type and p-type CMOS image sensor (CIS)technology. The calculated and the measured noise results withCMS show a good agreement. Measurement results also show thatthe n-type and p-type pixels reach a 1.1 e- and 0.88 h+ inputreferredtemporal noise respectively with a board-level 64 timesdigital CMS and ×6 analog gain.
Original language | English |
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Title of host publication | Electronic Imaging |
Subtitle of host publication | Image Sensors and Imaging Systems 2016 |
Publisher | SPIE |
Pages | 1-6 |
Number of pages | 6 |
DOIs | |
Publication status | Published - 14 Feb 2016 |
Event | 2016 IS&T International Symposium on Electronic Imaging - San Francisco, CA, United States Duration: 14 Feb 2016 → 18 Feb 2016 http://www.electronicimaging.org/ |
Conference
Conference | 2016 IS&T International Symposium on Electronic Imaging |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 14/02/16 → 18/02/16 |
Internet address |