A comparison of I-V characteristics of graphene silicon and graphene-porous silicon hybrid structures

M. Haditale, A. Zabihipour, H. Koppelaar

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

A novel Graphene/Porous Silicon hybrid device is fabricated and its electrical behaviors are studied along with a Graphene/Silicon device. Graphene (G) is prepared by exfoliation of graphite foil in aqueous solution of inorganic salt. Porous Silicon (PS) is fabricated by electrochemical etching of p-type Si. Graphene is deposited on the surface of Si and PS substrates by the Thermal Spray Pyrolysis (TSP) method. The current-voltage relationships of G/Si and G/PS devices are derived and studied under different volumes of graphene. The results reveal that there are important differences in the I–V characteristics of G/Si and G/PS devices in the forward as well as reverse bias. Furthermore, varying the volume of graphene deposition on Si and PS substrates have contrary effects on their I–V characteristics.

Original languageEnglish
Pages (from-to)387-393
Number of pages7
JournalSuperlattices and Microstructures
Volume122
DOIs
Publication statusPublished - 2018

Keywords

  • Electrical properties
  • Microporous materials
  • Microstructures
  • Raman spectroscopy
  • Semiconductors

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