A Deep Sub-Electron Temporal Noise CMOS Image Sensor with Adjustable sinc-type Filter to Achieve Photon Counting Capability

Liqiang Han; Albert J.P. Theuwissen

doi:10.1109/LSSC.2021.3089364

A Deep Sub-Electron Temporal Noise CMOS Image Sensor with Adjustable sinc-type Filter to Achieve Photon Counting Capability

Liqiang Han, Albert J.P. Theuwissen

Electronic Instrumentation

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

118 Downloads (Pure)

Abstract

This letter introduces a Gm-cell-based CMOS image sensor (CIS) achieving deep subelectron noise performance. The CIS presents a new compensation block and low-noise current source to improve the performance of the Gm pixel. Furthermore, an optional first-order IIR filter is implemented to improve the output swing. The conversion gain, full well capacity, and dynamic range of the CIS can be easily adjusted by the charging time and the filter mode for different applications. The prototype chip is fabricated in a standard 180 nm CIS process and has a deep subelectron read noise of 0.31e-rms at minimum (of the noise distribution) and 0.42e-rms at peak (of the noise distribution). A smooth and clear photon-counting histogram is observed.

Original language	English
Article number	9454499
Pages (from-to)	113-116
Number of pages	4
Journal	IEEE Solid-State Circuits Letters
Volume	4
DOIs	https://doi.org/10.1109/LSSC.2021.3089364
Publication status	Published - 2021

Bibliographical note

Accepted Author Manuscript

Keywords

CMOS image sensor (CIS)
noise distribution
photon counting
sinc-type filter
ultralow noise

Access to Document

10.1109/LSSC.2021.3089364

Paper_EDL_LiqiangAccepted author manuscript, 1.36 MB

Cite this

@article{b5ba1a7984354fb0a8a30b4fcce565c7,

title = "A Deep Sub-Electron Temporal Noise CMOS Image Sensor with Adjustable sinc-type Filter to Achieve Photon Counting Capability",

abstract = "This letter introduces a Gm-cell-based CMOS image sensor (CIS) achieving deep subelectron noise performance. The CIS presents a new compensation block and low-noise current source to improve the performance of the Gm pixel. Furthermore, an optional first-order IIR filter is implemented to improve the output swing. The conversion gain, full well capacity, and dynamic range of the CIS can be easily adjusted by the charging time and the filter mode for different applications. The prototype chip is fabricated in a standard 180 nm CIS process and has a deep subelectron read noise of 0.31e-rms at minimum (of the noise distribution) and 0.42e-rms at peak (of the noise distribution). A smooth and clear photon-counting histogram is observed.",

keywords = "CMOS image sensor (CIS), noise distribution, photon counting, sinc-type filter, ultralow noise",

author = "Liqiang Han and Theuwissen, {Albert J.P.}",

note = "Accepted Author Manuscript",

year = "2021",

doi = "10.1109/LSSC.2021.3089364",

language = "English",

volume = "4",

pages = "113--116",

journal = "IEEE Solid-State Circuits Letters",

issn = "2573-9603",

publisher = "Institute of Electrical and Electronic Engineers (IEEE)",

}

TY - JOUR

T1 - A Deep Sub-Electron Temporal Noise CMOS Image Sensor with Adjustable sinc-type Filter to Achieve Photon Counting Capability

AU - Han, Liqiang

AU - Theuwissen, Albert J.P.

N1 - Accepted Author Manuscript

PY - 2021

Y1 - 2021

N2 - This letter introduces a Gm-cell-based CMOS image sensor (CIS) achieving deep subelectron noise performance. The CIS presents a new compensation block and low-noise current source to improve the performance of the Gm pixel. Furthermore, an optional first-order IIR filter is implemented to improve the output swing. The conversion gain, full well capacity, and dynamic range of the CIS can be easily adjusted by the charging time and the filter mode for different applications. The prototype chip is fabricated in a standard 180 nm CIS process and has a deep subelectron read noise of 0.31e-rms at minimum (of the noise distribution) and 0.42e-rms at peak (of the noise distribution). A smooth and clear photon-counting histogram is observed.

AB - This letter introduces a Gm-cell-based CMOS image sensor (CIS) achieving deep subelectron noise performance. The CIS presents a new compensation block and low-noise current source to improve the performance of the Gm pixel. Furthermore, an optional first-order IIR filter is implemented to improve the output swing. The conversion gain, full well capacity, and dynamic range of the CIS can be easily adjusted by the charging time and the filter mode for different applications. The prototype chip is fabricated in a standard 180 nm CIS process and has a deep subelectron read noise of 0.31e-rms at minimum (of the noise distribution) and 0.42e-rms at peak (of the noise distribution). A smooth and clear photon-counting histogram is observed.

KW - CMOS image sensor (CIS)

KW - noise distribution

KW - photon counting

KW - sinc-type filter

KW - ultralow noise

UR - http://www.scopus.com/inward/record.url?scp=85112198963&partnerID=8YFLogxK

U2 - 10.1109/LSSC.2021.3089364

DO - 10.1109/LSSC.2021.3089364

M3 - Article

AN - SCOPUS:85112198963

SN - 2573-9603

VL - 4

SP - 113

EP - 116

JO - IEEE Solid-State Circuits Letters

JF - IEEE Solid-State Circuits Letters

M1 - 9454499

ER -

A Deep Sub-Electron Temporal Noise CMOS Image Sensor with Adjustable sinc-type Filter to Achieve Photon Counting Capability

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this