A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices

Saijun Mao; Zhilei Yao; Deming Zhu; Jelena Popovic; Jan Abraham Ferreira

doi:10.23919/EPE.2019.8915062

A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices

Saijun Mao^*, Zhilei Yao, Deming Zhu, Jelena Popovic, Jan Abraham Ferreira

^*Corresponding author for this work

Electrical Sustainable Energy

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

A novel modular high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high efficiency, sharp HV pulse and compact size. The modular architecture is introduced for high frequency operation firstly. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 8kW output-power, 110kV output-voltage HV generator prototype with 300 kHz500 kHz switching frequency is built to validate the design. Compared with existing design, 2 times high power density, around 10% higher efficiency and 4 times faster HV pulse can be achieved from the proposed modular SiC HV generators.

Original language	English
Title of host publication	2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
Publisher	IEEE
Number of pages	5
ISBN (Electronic)	9789075815313
DOIs	https://doi.org/10.23919/EPE.2019.8915062
Publication status	Published - 1 Sept 2019
Event	21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe - Genova, Italy Duration: 3 Sept 2019 → 5 Sept 2019

Conference

Conference	21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
Country/Territory	Italy
City	Genova
Period	3/09/19 → 5/09/19

Keywords

High frequency
High voltage generator
Modular architecture
Silicon Carbide Power Semiconductor Devices

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10.23919/EPE.2019.8915062

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title = "A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices",

abstract = "A novel modular high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high efficiency, sharp HV pulse and compact size. The modular architecture is introduced for high frequency operation firstly. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 8kW output-power, 110kV output-voltage HV generator prototype with 300 kHz500 kHz switching frequency is built to validate the design. Compared with existing design, 2 times high power density, around 10% higher efficiency and 4 times faster HV pulse can be achieved from the proposed modular SiC HV generators.",

keywords = "High frequency, High voltage generator, Modular architecture, Silicon Carbide Power Semiconductor Devices",

author = "Saijun Mao and Zhilei Yao and Deming Zhu and Jelena Popovic and Ferreira, {Jan Abraham}",

year = "2019",

month = sep,

day = "1",

doi = "10.23919/EPE.2019.8915062",

language = "English",

booktitle = "2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe",

publisher = "IEEE",

address = "United States",

note = "21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe ; Conference date: 03-09-2019 Through 05-09-2019",

}

Mao, S, Yao, Z, Zhu, D, Popovic, J & Ferreira, JA 2019, A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices. in 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe., 8915062, IEEE, 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, Genova, Italy, 3/09/19. https://doi.org/10.23919/EPE.2019.8915062

A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices. / Mao, Saijun; Yao, Zhilei; Zhu, Deming et al.
2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe. IEEE, 2019. 8915062.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices

AU - Mao, Saijun

AU - Yao, Zhilei

AU - Zhu, Deming

AU - Popovic, Jelena

AU - Ferreira, Jan Abraham

PY - 2019/9/1

Y1 - 2019/9/1

N2 - A novel modular high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high efficiency, sharp HV pulse and compact size. The modular architecture is introduced for high frequency operation firstly. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 8kW output-power, 110kV output-voltage HV generator prototype with 300 kHz500 kHz switching frequency is built to validate the design. Compared with existing design, 2 times high power density, around 10% higher efficiency and 4 times faster HV pulse can be achieved from the proposed modular SiC HV generators.

AB - A novel modular high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high efficiency, sharp HV pulse and compact size. The modular architecture is introduced for high frequency operation firstly. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 8kW output-power, 110kV output-voltage HV generator prototype with 300 kHz500 kHz switching frequency is built to validate the design. Compared with existing design, 2 times high power density, around 10% higher efficiency and 4 times faster HV pulse can be achieved from the proposed modular SiC HV generators.

KW - High frequency

KW - High voltage generator

KW - Modular architecture

KW - Silicon Carbide Power Semiconductor Devices

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U2 - 10.23919/EPE.2019.8915062

DO - 10.23919/EPE.2019.8915062

M3 - Conference contribution

BT - 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

PB - IEEE

T2 - 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

Y2 - 3 September 2019 through 5 September 2019

ER -

A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices

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Conference

Keywords

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