A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices

Saijun Mao*, Zhilei Yao, Deming Zhu, Jelena Popovic, Jan Abraham Ferreira

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

A novel modular high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high efficiency, sharp HV pulse and compact size. The modular architecture is introduced for high frequency operation firstly. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 8kW output-power, 110kV output-voltage HV generator prototype with 300 kHz500 kHz switching frequency is built to validate the design. Compared with existing design, 2 times high power density, around 10% higher efficiency and 4 times faster HV pulse can be achieved from the proposed modular SiC HV generators.

Original languageEnglish
Title of host publication2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages5
ISBN (Electronic)9789075815313
DOIs
Publication statusPublished - 1 Sep 2019
Event21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe - Genova, Italy
Duration: 3 Sep 20195 Sep 2019

Conference

Conference21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
CountryItaly
CityGenova
Period3/09/195/09/19

Keywords

  • High frequency
  • High voltage generator
  • Modular architecture
  • Silicon Carbide Power Semiconductor Devices

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