A high PSRR bandgap voltage reference with virtually diode-connected MOS transistors.

K Souri, H Shamsi, M Kazemi, Kamran Souri

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	1708-1712
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E93-C
Issue number	12
Publication status	Published - 2010

Cite this

@article{d60fd1c480704ca99648ce402da92fc7,

title = "A high PSRR bandgap voltage reference with virtually diode-connected MOS transistors.",

author = "K Souri and H Shamsi and M Kazemi and Kamran Souri",

year = "2010",

language = "English",

volume = "E93-C",

pages = "1708--1712",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "12",

}

TY - JOUR

T1 - A high PSRR bandgap voltage reference with virtually diode-connected MOS transistors.

AU - Souri, K

AU - Shamsi, H

AU - Kazemi, M

AU - Souri, Kamran

PY - 2010

Y1 - 2010

UR - http://www.arnetminer.org/viewpub.do?pid=2971207

M3 - Article

SN - 0916-8524

VL - E93-C

SP - 1708

EP - 1712

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 12

ER -