A Highly Digital 2210μm2Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

Jan A. Angevare; Youngcheol Chae; Kofi A.A. Makinwa

doi:10.1109/ISSCC42613.2021.9365995

A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

Jan A. Angevare, Youngcheol Chae, Kofi A.A. Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

30 Downloads (Pure)

Abstract

Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).

Original language	English
Title of host publication	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	76-78
Number of pages	3
ISBN (Electronic)	9781728195490
DOIs	https://doi.org/10.1109/ISSCC42613.2021.9365995
Publication status	Published - 2021
Event	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - San Francisco, United States Duration: 13 Feb 2021 → 22 Feb 2021

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	64
ISSN (Print)	0193-6530

Conference

Conference	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021
Country/Territory	United States
City	San Francisco
Period	13/02/21 → 22/02/21

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Access to Document

10.1109/ISSCC42613.2021.9365995

5.3_A_Highly_Digital_2210m2_Resistor-Based_Temperature_Sensor_with_a_1-Point_Trimmed_Inaccuracy_of__1.3__C_3__from_-55__C_to_125__C_in_65nm_CMOSFinal published version, 378 KB

Cite this

Angevare, J. A., Chae, Y., & Makinwa, K. A. A. (2021). A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers (pp. 76-78). [9365995] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ISSCC42613.2021.9365995

Angevare, Jan A. ; Chae, Youngcheol ; Makinwa, Kofi A.A. / A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers (IEEE), 2021. pp. 76-78 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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abstract = "Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).",

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Angevare, JA, Chae, Y & Makinwa, KAA 2021, A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. in 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers., 9365995, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 64, Institute of Electrical and Electronics Engineers (IEEE), pp. 76-78, 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, United States, 13/02/21. https://doi.org/10.1109/ISSCC42613.2021.9365995

A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. / Angevare, Jan A.; Chae, Youngcheol; Makinwa, Kofi A.A.

2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers (IEEE), 2021. p. 76-78 9365995 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Angevare JA, Chae Y, Makinwa KAA. A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers (IEEE). 2021. p. 76-78. 9365995. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC42613.2021.9365995