A Highly Digital 2210μm2Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

Jan A. Angevare; Youngcheol Chae; Kofi A.A. Makinwa

doi:10.1109/ISSCC42613.2021.9365995

A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

Jan A. Angevare, Youngcheol Chae, Kofi A.A. Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).

Original language	English
Title of host publication	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	76-78
Number of pages	3
ISBN (Electronic)	9781728195490
DOIs	https://doi.org/10.1109/ISSCC42613.2021.9365995
Publication status	Published - 2021
Event	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - San Francisco, United States Duration: 13 Feb 2021 → 22 Feb 2021

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	64
ISSN (Print)	0193-6530

Conference

Conference	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021
Country	United States
City	San Francisco
Period	13/02/21 → 22/02/21

Access to Document

10.1109/ISSCC42613.2021.9365995

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Angevare, J. A., Chae, Y., & Makinwa, K. A. A. (2021). A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers (pp. 76-78). [9365995] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ISSCC42613.2021.9365995

Angevare, Jan A. ; Chae, Youngcheol ; Makinwa, Kofi A.A. / A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers (IEEE), 2021. pp. 76-78 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

@inproceedings{9046b6d518d64d41a4c5de8a7c7a1185,

title = "A Highly Digital 2210μm2Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS",

abstract = "Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).",

author = "Angevare, {Jan A.} and Youngcheol Chae and Makinwa, {Kofi A.A.}",

year = "2021",

doi = "10.1109/ISSCC42613.2021.9365995",

language = "English",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "76--78",

booktitle = "2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers",

address = "United States",

note = "2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 ; Conference date: 13-02-2021 Through 22-02-2021",

}

Angevare, JA, Chae, Y & Makinwa, KAA 2021, A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. in 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers., 9365995, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 64, Institute of Electrical and Electronics Engineers (IEEE), pp. 76-78, 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, United States, 13/02/21. https://doi.org/10.1109/ISSCC42613.2021.9365995

A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. / Angevare, Jan A.; Chae, Youngcheol; Makinwa, Kofi A.A.

2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers (IEEE), 2021. p. 76-78 9365995 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A Highly Digital 2210μm2Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

AU - Angevare, Jan A.

AU - Chae, Youngcheol

AU - Makinwa, Kofi A.A.

PY - 2021

Y1 - 2021

N2 - Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).

AB - Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).

UR - http://www.scopus.com/inward/record.url?scp=85102345616&partnerID=8YFLogxK

U2 - 10.1109/ISSCC42613.2021.9365995

DO - 10.1109/ISSCC42613.2021.9365995

M3 - Conference contribution

AN - SCOPUS:85102345616

T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SP - 76

EP - 78

BT - 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021

Y2 - 13 February 2021 through 22 February 2021

ER -

Angevare JA, Chae Y, Makinwa KAA. A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers (IEEE). 2021. p. 76-78. 9365995. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC42613.2021.9365995